Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
文献类型：会议论文
| 作者 | Shen, WJ ; Duan, Y ; Wang, J ; Wang, QY ; Zeng, YP |
| 出版日期 | 2006 |
| 会议名称 | 20th congress of the international-commission-for-optics |
| 会议日期 | aug 21-26, 2005 |
| 会议地点 | changchun, peoples r china |
| 关键词 | ZnO MOCVD thermal annealing photoluminescence x-ray diffraction atomic force microscopy PULSED-LASER DEPOSITION THIN-FILMS PHOTOLUMINESCENCE MECHANISMS EPITAXY CVD SI |
| 页码 | 6029: g290-g290 |
| 通讯作者 | shen, wj, chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china. |
| 中文摘要 | high quality zno films have been successfully grown on si(100) substrates by metal-organic chemical vapor deposition (mocvd) technique. the optimization of growth conditions (ii-vi ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on zno films' crystal quality, surface morphology and optical properties were investigated using x-ray diffraction (xrd), atomic force microscopy (afm), and photoluminescence (pl) spectrum, respectively. the xrd patterns of the films grown at the optimized temperature (300 degrees c) show only a sharp peak at about 34.4 degrees corresponding to the (0002) peak of hexagonal zno, and the fwhm was lower than 0.4 degrees. we find that under the optimized growth conditions, the increase of the zno films' thickness cannot improve their structural and optical properties. we suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between si and zno. in pl analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality zno films obtained. thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. through the analysis of pl spectra, we found that zno films annealing in oxygen have the strongest intensity and the low fwhm of 10.44 nm(106 mev) which is smaller than other reported values on zno films grown by mocvd. |
| 英文摘要 | high quality zno films have been successfully grown on si(100) substrates by metal-organic chemical vapor deposition (mocvd) technique. the optimization of growth conditions (ii-vi ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on zno films' crystal quality, surface morphology and optical properties were investigated using x-ray diffraction (xrd), atomic force microscopy (afm), and photoluminescence (pl) spectrum, respectively. the xrd patterns of the films grown at the optimized temperature (300 degrees c) show only a sharp peak at about 34.4 degrees corresponding to the (0002) peak of hexagonal zno, and the fwhm was lower than 0.4 degrees. we find that under the optimized growth conditions, the increase of the zno films' thickness cannot improve their structural and optical properties. we suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between si and zno. in pl analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality zno films obtained. thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. through the analysis of pl spectra, we found that zno films annealing in oxygen have the strongest intensity and the low fwhm of 10.44 nm(106 mev) which is smaller than other reported values on zno films grown by mocvd.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:13z (gmt). no. of bitstreams: 1 2319.pdf: 411896 bytes, checksum: b601a27533660783ac4184eb1084120d (md5) previous issue date: 2006; int commiss opt.; chinese opt soc.; changchun inst opt, fine mech & phys, cas.; afosr asia off.; chinese acad engn.; chinese acad sci & technol.; european opt soc.; ieee leos.; natl nat sci fdn china.; opt soc japan.; opt soc korea.; opt soc russia, siberian.; opt soc amer.; spie.; chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | int commiss opt.; chinese opt soc.; changchun inst opt, fine mech & phys, cas.; afosr asia off.; chinese acad engn.; chinese acad sci & technol.; european opt soc.; ieee leos.; natl nat sci fdn china.; opt soc japan.; opt soc korea.; opt soc russia, siberian.; opt soc amer.; spie. |
| 会议录 | ico20 materials and nanostructures丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie)
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-6060-5 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9874]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shen, WJ,Duan, Y,Wang, J,et al. Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G[C]. 见:20th congress of the international-commission-for-optics. changchun, peoples r china. aug 21-26, 2005. |
入库方式： OAI收割
来源：半导体研究所
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