Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O
文献类型：会议论文
| 作者 | Zhao, Q ; Pan, JQ ; Zhang, J ; Zhou, GT ; Wu, J ; Wang, LF ; Wang, W |
| 出版日期 | 2005 |
| 会议名称 | conference on optoelectronic materials and devices for optical communications |
| 会议日期 | nov 07-10, 2005 |
| 会议地点 | shanghai, peoples r china |
| 关键词 | selective-area growth ultra-low-pressure integrated optoelectronics optical pulse generation RING LASER |
| 页码 | 6020: o200-o200 |
| 通讯作者 | zhao, q, chinese acad sci, inst semicond, natl res ctr optoelect technol, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | a novel device of tandem multiple quantum wells (mqws) electroabsorption modulators (eams) monolithically integrated with dfb laser is fabricated by ultra-low-pressure (22 mbar) selective area guowth (sag) mocvd technique. experimental results exhibit superior device characteristics with low threshold of 19 mx output light power of 4.5 mw and over 20 db extinction ratio when coupled into a single mode fiber. moreover, over 10 ghz modulation bandwidth is developed with a driving voltage of 2 v. using i this sinusoidal voltage driven integrated device, 10ghz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained. |
| 英文摘要 | a novel device of tandem multiple quantum wells (mqws) electroabsorption modulators (eams) monolithically integrated with dfb laser is fabricated by ultra-low-pressure (22 mbar) selective area guowth (sag) mocvd technique. experimental results exhibit superior device characteristics with low threshold of 19 mx output light power of 4.5 mw and over 20 db extinction ratio when coupled into a single mode fiber. moreover, over 10 ghz modulation bandwidth is developed with a driving voltage of 2 v. using i this sinusoidal voltage driven integrated device, 10ghz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:15z (gmt). no. of bitstreams: 1 2329.pdf: 185840 bytes, checksum: d773b9a88896adbe792e83d45fb6e056 (md5) previous issue date: 2005; spie.; chinese opt soc.; china inst commun.; shanghai jiao tong univ.; alcatel shanghai bell.; shanghai inst opt & fine mech.; photon bridges.; ieee commun soc.; ieee leos.; opt soc amer.; huawei technol.; chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc.; china inst commun.; shanghai jiao tong univ.; alcatel shanghai bell.; shanghai inst opt & fine mech.; photon bridges.; ieee commun soc.; ieee leos.; opt soc amer.; huawei technol. |
| 会议录 | optoelectronic materials and devices for optical communications丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie)
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-6051-6 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9894]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, Q,Pan, JQ,Zhang, J,et al. Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O[C]. 见:conference on optoelectronic materials and devices for optical communications. shanghai, peoples r china. nov 07-10, 2005. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。