Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
文献类型：会议论文
| 作者 | Zhao, YW ; Dong, ZY ; Zhang, YH ; Li, CJ |
| 出版日期 | 2004 |
| 会议名称 | 13th international conference on semiconducting and insulating materials (simc xiii) |
| 会议日期 | sep 20-25, 2004 |
| 会议地点 | beijing, peoples r china |
| 关键词 | DEEP-LEVEL DEFECTS FE-DOPED INP GROWN INP SPECTROSCOPY RESONANCE WAFER |
| 页码 | 15-18 |
| 通讯作者 | zhao, yw, chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | fe-doped semi-insulating (si) inp has become semi-conducting (sc) material completely after annealing at 900 v for 10 hours. defects in the sc and si inp materials have been studied by deep level transient spectroscopy (dlts) and thermally stimulated current spectroscopy (tsc) respectively. the dlts only detected fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the sc-inp tsc results confirmed the nonexistence of deep level defects in the annealed si-inp. the results demonstrate a significant influence of the thermally induced defects on the electrical properties of si-inp. the formation mechanism and the nature of the shallow donor defect have been discussed based on the results. |
| 英文摘要 | fe-doped semi-insulating (si) inp has become semi-conducting (sc) material completely after annealing at 900 v for 10 hours. defects in the sc and si inp materials have been studied by deep level transient spectroscopy (dlts) and thermally stimulated current spectroscopy (tsc) respectively. the dlts only detected fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the sc-inp tsc results confirmed the nonexistence of deep level defects in the annealed si-inp. the results demonstrate a significant influence of the thermally induced defects on the electrical properties of si-inp. the formation mechanism and the nature of the shallow donor defect have been discussed based on the results.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:16z (gmt). no. of bitstreams: 1 2337.pdf: 236180 bytes, checksum: 4c7bc386763949360925c80044f19e77 (md5) previous issue date: 2004; ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.; chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ. |
| 会议录 | smic-xiii2004 13th international conference on semiconducting & insulating materials
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-8668-x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9910]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, YW,Dong, ZY,Zhang, YH,et al. Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration[C]. 见:13th international conference on semiconducting and insulating materials (simc xiii). beijing, peoples r china. sep 20-25, 2004. |
入库方式： OAI收割
来源：半导体研究所
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