Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation
文献类型：会议论文
| 作者 | Islam MR ; Chen NF ; Yamada M |
| 出版日期 | 2004 |
| 会议名称 | 13th international conference on semiconducting and insulating materials (simc xiii) |
| 会议日期 | sep 20-25, 2004 |
| 会议地点 | beijing, peoples r china |
| 页码 | 185-188 |
| 通讯作者 | islam, mr, khulna univ engn & technol, dept elect & elect engn, la jolla, ca 92037 usa. |
| 中文摘要 | raman scattering measurements have been performed in diluted magnetic semiconductor ga1-xmnxas prepared by mn-ion implantation, deposition, and post-annealing technique. it is found that the raman spectrum measured from the implanted surface of the sample shows some new weak modes in addition to the gaas-like modes which are observed from the unimplanted surface. the new vibrational modes observed are assigned to mnas-like modes. the coupled lo-phonon plasmon mode, and mn and as related vibrational modes caused by mn-ion implantation, deposition, and post-annealing are also observed. furthermore, the gaas-like modes are found to be shifted by approximately 4 cm(-1) in the lower frequency side, compared with those observed from the unimplanted surface. |
| 英文摘要 | raman scattering measurements have been performed in diluted magnetic semiconductor ga1-xmnxas prepared by mn-ion implantation, deposition, and post-annealing technique. it is found that the raman spectrum measured from the implanted surface of the sample shows some new weak modes in addition to the gaas-like modes which are observed from the unimplanted surface. the new vibrational modes observed are assigned to mnas-like modes. the coupled lo-phonon plasmon mode, and mn and as related vibrational modes caused by mn-ion implantation, deposition, and post-annealing are also observed. furthermore, the gaas-like modes are found to be shifted by approximately 4 cm(-1) in the lower frequency side, compared with those observed from the unimplanted surface.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ. |
| 会议录 | smic-xiii 2004 13th international conference on semiconducting & insulating materials
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-8668-x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9924]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Islam MR,Chen NF,Yamada M. Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation[C]. 见:13th international conference on semiconducting and insulating materials (simc xiii). beijing, peoples r china. sep 20-25, 2004. |
入库方式： OAI收割
来源：半导体研究所
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