Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)
文献类型：会议论文
| 作者 | Wang YL ; Wu J ; Chen YH ; Wang ZG ; Zeng YP |
| 出版日期 | 2004 |
| 会议名称 | 13th international conference on semiconducting and insulating materials (simc xiii) |
| 会议日期 | sep 20-25, 2004 |
| 会议地点 | beijing, peoples r china |
| 关键词 | LAYER-ORDERING ORIENTATION |
| 页码 | 238-241 |
| 通讯作者 | wang, yl, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. |
| 中文摘要 | the self-organized inas/in0.52al0.48as nanostructure were grown on inp (001) using molecular beam epitaxy (mbe). the nanostructure has been studied using transmission electron microscopy (tem) and high resolution transmission electron microscopy (hrtem). the edge dislocations with the burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. the results show that in the region near an edge dislocation, no inas wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. the mechanisms for the formation of the [001]/2 edge dislocations were discussed. |
| 英文摘要 | the self-organized inas/in0.52al0.48as nanostructure were grown on inp (001) using molecular beam epitaxy (mbe). the nanostructure has been studied using transmission electron microscopy (tem) and high resolution transmission electron microscopy (hrtem). the edge dislocations with the burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. the results show that in the region near an edge dislocation, no inas wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. the mechanisms for the formation of the [001]/2 edge dislocations were discussed.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ. |
| 会议录 | smic-xiii 2004 13th international conference on semiconducting & insulating materials
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-8668-x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9926]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang YL,Wu J,Chen YH,et al. Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)[C]. 见:13th international conference on semiconducting and insulating materials (simc xiii). beijing, peoples r china. sep 20-25, 2004. |
入库方式： OAI收割
来源：半导体研究所
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