Deep levels in high resistivity GaN epilayers grown by MOCVD
文献类型：会议论文
| 作者 | Fang, CB ; Wang, XL ; Wang, JX ; Liu, C ; Wang, CM ; Hu, GX ; Li, JP ; Li, CJ |
| 出版日期 | 2006 |
| 会议名称 | 32nd international symposium on compound semiconductors |
| 会议日期 | sep 18-22, 2005 |
| 会议地点 | rust, germany |
| 关键词 | THERMALLY STIMULATED CURRENT GALLIUM NITRIDE DEFECTS |
| 页码 | vol 3 no 3 3 (3): 585-588 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | undoped high resistivity (hr) gan epilayers were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (mocvd). thermally stimulated current (tsc) and resistivity measurements have been carried out to investigate deep level traps. deep levels with activation energies of 1.06ev and 0.85ev were measured in sample 1. gaussian fitting of tsc spectra showed five deep levels in different samples. (c) 2006 wiley vch vertag gmbh & co. kgaa, weinheim |
| 英文摘要 | undoped high resistivity (hr) gan epilayers were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (mocvd). thermally stimulated current (tsc) and resistivity measurements have been carried out to investigate deep level traps. deep levels with activation energies of 1.06ev and 0.85ev were measured in sample 1. gaussian fitting of tsc spectra showed five deep levels in different samples. (c) 2006 wiley vch vertag gmbh & co. kgaa, weinheim; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:19z (gmt). no. of bitstreams: 1 2349.pdf: 276514 bytes, checksum: 03fa159034c5db4ade2268c48f91536a (md5) previous issue date: 2006; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | physica status solidi c - current topics in solid state physics丛书标题: physica status solidi c-current topics in solid state physics
 |
| 会议录出版者 | wiley-vch, inc ; 605 third ave, new york, ny 10158-0012 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 605 third ave, new york, ny 10158-0012 usa |
| 语种 | 英语 |
| ISSN号 | 1610-1634 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9934]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fang, CB,Wang, XL,Wang, JX,et al. Deep levels in high resistivity GaN epilayers grown by MOCVD[C]. 见:32nd international symposium on compound semiconductors. rust, germany. sep 18-22, 2005. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。