Research on the band-gap of InN grown on siticon substrates
文献类型：会议论文
| 作者 | Xiao, HL ; Wang, XL ; Wang, JX ; Zhang, NH ; Liu, HX ; Zeng, YP ; Li, JM |
| 出版日期 | 2006 |
| 会议名称 | 32nd international symposium on compound semiconductors |
| 会议日期 | sep 18-22, 2005 |
| 会议地点 | rust, germany |
| 关键词 | MOLECULAR-BEAM EPITAXY WURTZITE INN NITRIDE ABSORPTION ALLOYS FILMS |
| 页码 | vol 3 no 3 3 (3): 594-597 |
| 通讯作者 | xiao, hl, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | photoluminescence (pl) and absorption experiments were carried out to examine the fundamental band-gap of inn films grown on silicon substrates. a strong pl peak at 0.78 ev was observed at room temperature, which is much lower than the commonly accepted value of 1.9 ev. the integrated pl intensity was found to depend linearly on the excitation laser intensity over a wide intensity range. these results strongly suggest that the observed pl is related to the emission of the fundamental inter-band transitions of inn rather than to deep defect or impurity levels. due to the effect of band-filling with increasing free electron concentration, the absorption edge shifts to higher energy. (c) 2006 wiley-vch verlag gmbh & co. kgaa, weinheim. |
| 英文摘要 | photoluminescence (pl) and absorption experiments were carried out to examine the fundamental band-gap of inn films grown on silicon substrates. a strong pl peak at 0.78 ev was observed at room temperature, which is much lower than the commonly accepted value of 1.9 ev. the integrated pl intensity was found to depend linearly on the excitation laser intensity over a wide intensity range. these results strongly suggest that the observed pl is related to the emission of the fundamental inter-band transitions of inn rather than to deep defect or impurity levels. due to the effect of band-filling with increasing free electron concentration, the absorption edge shifts to higher energy. (c) 2006 wiley-vch verlag gmbh & co. kgaa, weinheim.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:19z (gmt). no. of bitstreams: 1 2350.pdf: 168270 bytes, checksum: 3ff8d0dbd62ba0a58ce91e45b5aa053b (md5) previous issue date: 2006; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | physica status solidi c - current topics in solid state physics丛书标题: physica status solidi c-current topics in solid state physics
 |
| 会议录出版者 | wiley-vch, inc ; 605 third ave, new york, ny 10158-0012 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 605 third ave, new york, ny 10158-0012 usa |
| 语种 | 英语 |
| ISSN号 | 1610-1634 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9936]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xiao, HL,Wang, XL,Wang, JX,et al. Research on the band-gap of InN grown on siticon substrates[C]. 见:32nd international symposium on compound semiconductors. rust, germany. sep 18-22, 2005. |
入库方式： OAI收割
来源：半导体研究所
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