1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
文献类型：会议论文
| 作者 | Niu, ZC ; Zhang, SY ; Ni, HQ ; Wu, DH ; He, ZH ; Sun, Z ; Han, Q ; Wu, RG |
| 出版日期 | 2006 |
| 会议名称 | 32nd international symposium on compound semiconductors |
| 会议日期 | sep 18-22, 2005 |
| 会议地点 | rust, germany |
| 关键词 | IMPROVED LUMINESCENCE EFFICIENCY TEMPERATURE PHOTOLUMINESCENCE NITROGEN ORIGIN DIODES |
| 页码 | vol 3 no 3 3 (3): 631-634 |
| 通讯作者 | niu, zc, chinese acad sci, inst semicond, state key lab superlattice & microstruct, beijing 100083, peoples r china. |
| 中文摘要 | high structural and optical quality 1.3 mu m gainnas/gaas quantum well (qw) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. the growth of well layers was monitored by reflection high-energy electron diffraction (rheed). room temperature photoluminescence (pl) peak intensity of the gain0.425nas/gaas (6 nm / 20 nm) 3qw is higher than, and the full width at half maximum (fwhm) is comparable to, that of in0.425gaas/gaas 3qw, indicating improved optical quality due to strain compensation effects by introducing n to the high indium content ingaas epilayer. the measured (004) x-ray rocking curve shows clear satellite peaks and pendellosung fringes, suggesting high film uniformity and smooth interfaces. the cross sectional tem measurements further reveal that there are no structural defects in such high indium content qws. (c) 2006 wiley-vch verlag gmbh & co. kgaa, weinheim. |
| 英文摘要 | high structural and optical quality 1.3 mu m gainnas/gaas quantum well (qw) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. the growth of well layers was monitored by reflection high-energy electron diffraction (rheed). room temperature photoluminescence (pl) peak intensity of the gain0.425nas/gaas (6 nm / 20 nm) 3qw is higher than, and the full width at half maximum (fwhm) is comparable to, that of in0.425gaas/gaas 3qw, indicating improved optical quality due to strain compensation effects by introducing n to the high indium content ingaas epilayer. the measured (004) x-ray rocking curve shows clear satellite peaks and pendellosung fringes, suggesting high film uniformity and smooth interfaces. the cross sectional tem measurements further reveal that there are no structural defects in such high indium content qws. (c) 2006 wiley-vch verlag gmbh & co. kgaa, weinheim.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:19z (gmt). no. of bitstreams: 1 2351.pdf: 333257 bytes, checksum: 0135a2c23600f5da128d3c42785406ae (md5) previous issue date: 2006; chinese acad sci, inst semicond, state key lab superlattice & microstruct, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | physica status solidi c - current topics in solid state physics丛书标题: physica status solidi c-current topics in solid state physics
 |
| 会议录出版者 | wiley-vch, inc ; 605 third ave, new york, ny 10158-0012 usa |
| 学科主题 | 半导体物理 |
| 会议录出版地 | 605 third ave, new york, ny 10158-0012 usa |
| 语种 | 英语 |
| ISSN号 | 1610-1634 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9938]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Niu, ZC,Zhang, SY,Ni, HQ,et al. 1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy[C]. 见:32nd international symposium on compound semiconductors. rust, germany. sep 18-22, 2005. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。