Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
文献类型：会议论文
| 作者 | Sun, Z (Sun, Z.) ; Xu, ZY (Xu, Z. Y.) ; Yang, XD (Yang, X. D.) ; Sun, BQ (Sun, B. Q.) ; Ji, Y (Ji, Y.) ; Zhang, SY (Zhang, S. Y.) ; Ni, HQ (Ni, H. Q.) ; Niu, ZC (Niu, Z. C.) |
| 出版日期 | 2006 |
| 会议名称 | conference on ultrafast phenomena in semiconductors and nanostructure materials x |
| 会议日期 | jan 23-25, 2006 |
| 会议地点 | san jose, ca |
| 关键词 | GaInNAs/GaAs quantum wells optical properties nonradiative recombination effect time-resolved photoluminescence PL decay dynamics PL thermal quenching MOLECULAR-BEAM EPITAXY GAASN ALLOYS EXCITATION |
| 页码 | 6118: z1180-z1180 |
| 通讯作者 | sun, z, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. |
| 中文摘要 | the nonradiative recombination effect on the photoluminescence (pl) decay dynamics in gainnas/gaas quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. it is found that the pl decay dynamics strongly depends on the excitation intensity. in particular, under the moderate excitation levels the pl decay curves exhibit unusual non-exponential behavior and show a convex shape. by introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. in the cw pl measurement, a rapid pl quenching is observed even at very low temperature and is of the excitation power dependence. these results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of gainnas/gaas quantum wells. |
| 英文摘要 | the nonradiative recombination effect on the photoluminescence (pl) decay dynamics in gainnas/gaas quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. it is found that the pl decay dynamics strongly depends on the excitation intensity. in particular, under the moderate excitation levels the pl decay curves exhibit unusual non-exponential behavior and show a convex shape. by introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. in the cw pl measurement, a rapid pl quenching is observed even at very low temperature and is of the excitation power dependence. these results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of gainnas/gaas quantum wells.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:21z (gmt). no. of bitstreams: 1 2362.pdf: 312619 bytes, checksum: 7f1c87b9dd04055983e6c6c5592299d5 (md5) previous issue date: 2006; chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | ultrafast phenomena in semiconductors and nanostructure materials x丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie)
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 半导体物理 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-6160-1 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9960]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun, Z ,Xu, ZY ,Yang, XD ,et al. Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z[C]. 见:conference on ultrafast phenomena in semiconductors and nanostructure materials x. san jose, ca. jan 23-25, 2006. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。