Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors
文献类型：会议论文
| 作者 | Li, Z (Li, Z.) ; Li, CJ (Li, C. J.) |
| 出版日期 | 2006 |
| 会议名称 | 11th conference on defects recognition imaging and physics in semiconductors |
| 会议日期 | sep 13-19, 2005 |
| 会议地点 | beijing, peoples r china |
| 关键词 | DLTS |
| 页码 | 9 (1-3): 283-287 |
| 通讯作者 | li, z, brookhaven natl lab, upton, ny 11973 usa. 电子邮箱地址: zhengl@bnl.gov |
| 中文摘要 | current-based microscopic defect analysis method such as current deep level transient spectroscopy (i-dlts) and thermally stimulated current have been developed over the years at brookhaven national laboratory (bnl) for the defect characterizations on heavily irradiated (phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k omega cm) si sensors/detectors. the conventional dlts method using a capacitance transient is not valid on heavily irradiated high-resistivity si sensors/detectors. a new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity si sensors/detectors. (c) 2006 published by elsevier ltd. |
| 英文摘要 | current-based microscopic defect analysis method such as current deep level transient spectroscopy (i-dlts) and thermally stimulated current have been developed over the years at brookhaven national laboratory (bnl) for the defect characterizations on heavily irradiated (phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k omega cm) si sensors/detectors. the conventional dlts method using a capacitance transient is not valid on heavily irradiated high-resistivity si sensors/detectors. a new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity si sensors/detectors. (c) 2006 published by elsevier ltd.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; brookhaven natl lab, upton, ny 11973 usa; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI（ISTP） |
| 会议录 | materials science in semiconductor processing
 |
| 会议录出版者 | elsevier sci ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
| 学科主题 | 半导体器件 |
| 会议录出版地 | the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
| 语种 | 英语 |
| ISSN号 | 1369-8001 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10000]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li, Z ,Li, CJ . Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors[C]. 见:11th conference on defects recognition imaging and physics in semiconductors. beijing, peoples r china. sep 13-19, 2005. |
入库方式： OAI收割
来源：半导体研究所
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