Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate
文献类型：会议论文
| 作者 | Zhou HY ; Qu SC ; Wang ZG ; Liang LY ; Cheng BC ; Liu JP ; Peng WQ |
| 出版日期 | 2006 |
| 会议名称 | 11th conference on defects recognition imaging and physics in semiconductors |
| 会议日期 | sep 13-19, 2005 |
| 会议地点 | beijing, peoples r china |
| 关键词 | anodic alumina films |
| 页码 | 9 (1-3): 337-340 |
| 通讯作者 | zhou, hy, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhouhy@mail.semi.ac.cn |
| 中文摘要 | self-ordered porous alumina films on a semi-insulated gaas substrate were prepared in oxalic acid aqueous solutions by three-step anodization. the i-t curve of anodization process was recorded to observe time effects of anodization. atomic force microscopy was used to investigate structure and morphology of alumina films. it was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. at the same time the pore size and shape change with the pore widening time. field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to i-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 elsevier ltd. all rights reserved. |
| 英文摘要 | self-ordered porous alumina films on a semi-insulated gaas substrate were prepared in oxalic acid aqueous solutions by three-step anodization. the i-t curve of anodization process was recorded to observe time effects of anodization. atomic force microscopy was used to investigate structure and morphology of alumina films. it was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. at the same time the pore size and shape change with the pore widening time. field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to i-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 elsevier ltd. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI（ISTP） |
| 会议录 | materials science in semiconductor processing
 |
| 会议录出版者 | elsevier sci ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
| 学科主题 | 半导体材料 |
| 会议录出版地 | the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
| 语种 | 英语 |
| ISSN号 | 1369-8001 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10002]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou HY,Qu SC,Wang ZG,et al. Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate[C]. 见:11th conference on defects recognition imaging and physics in semiconductors. beijing, peoples r china. sep 13-19, 2005. |
入库方式： OAI收割
来源：半导体研究所
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