Defect influence on luminescence efficiency of GaN-based LEDs
文献类型:会议论文
作者 | Li SP (Li Shuping) ; Fang ZL (Fang Zhilai) ; Chen HY (Chen Hangyang) ; Li JC (Li Jinchai) ; Chen XH (Chen Xiaohong) ; Yuan XL (Yuan Xiaoli) ; Sekiguchi T (Sekiguchi Takashi) ; Wang QM (Wang Qiming) ; Kang JY (Kang Junyong) |
出版日期 | 2006 |
会议名称 | 11th conference on defects recognition imaging and physics in semiconductors |
会议日期 | sep 13-19, 2005 |
会议地点 | beijing, peoples r china |
关键词 | defects |
页码 | 9 (1-3): 371-374 |
通讯作者 | kang, jy, xiamen univ, dept phys, xiamen 361005, peoples r china. 电子邮箱地址: jykang@xmu.edu.cn |
中文摘要 | wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. the pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. the cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. the electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 elsevier ltd. all rights reserved. |
英文摘要 | wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. the pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. the cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. the electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 elsevier ltd. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; xiamen univ, dept phys, xiamen 361005, peoples r china; xiamen univ, semicond photon res ctr, xiamen 361005, peoples r china; natl inst mat sci, tsukuba, ibaraki, japan; chinese acad sci, inst semicond, beijing 100864, peoples r china |
收录类别 | CPCI(ISTP) |
会议录 | materials science in semiconductor processing |
会议录出版者 | elsevier sci ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
学科主题 | 光电子学 |
会议录出版地 | the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
语种 | 英语 |
ISSN号 | 1369-8001 |
源URL | [http://ir.semi.ac.cn/handle/172111/10004] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Li SP ,Fang ZL ,Chen HY ,et al. Defect influence on luminescence efficiency of GaN-based LEDs[C]. 见:11th conference on defects recognition imaging and physics in semiconductors. beijing, peoples r china. sep 13-19, 2005. |
入库方式: OAI收割
来源:半导体研究所
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