Electron irradiation-induced defects in InP pre-annealed at high temperature
文献类型：会议论文
| 作者 | Zhao, YW (Zhao, Y. W.) ; Dong, ZY (Dong, Z. Y.) ; Deng, AH (Deng, A. H.) |
| 出版日期 | 2006 |
| 会议名称 | 11th conference on defects recognition imaging and physics in semiconductors |
| 会议日期 | sep 13-19, 2005 |
| 会议地点 | beijing, peoples r china |
| 关键词 | indium phosphide |
| 页码 | 9 (1-3): 380-383 |
| 通讯作者 | zhao, yw, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhaoyw@red.semi.ac.cn |
| 中文摘要 | electron irradiation-induced deep level defects have been studied in inp which has undergone high-temperature annealing in phosphorus and iron phosphide ambients, respectively. in contrast to a high concentration of irradiation-induced defects in as-grown and phosphorus ambient annealed inp, inp pre-annealed in iron phosphide ambient has a very low concentration of defects. the phenomenon has been explained in terms of a faster recombination of radiation-induced defects in the annealed inp. the radiation-induced defects in the annealed inp have been compared and studied. (c) 2006 elsevier ltd. all rights reserved. |
| 英文摘要 | electron irradiation-induced deep level defects have been studied in inp which has undergone high-temperature annealing in phosphorus and iron phosphide ambients, respectively. in contrast to a high concentration of irradiation-induced defects in as-grown and phosphorus ambient annealed inp, inp pre-annealed in iron phosphide ambient has a very low concentration of defects. the phenomenon has been explained in terms of a faster recombination of radiation-induced defects in the annealed inp. the radiation-induced defects in the annealed inp have been compared and studied. (c) 2006 elsevier ltd. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; chinese acad sci, inst semicond, beijing 100083, peoples r china; sichuan univ, dept phys, chengdu 610065, peoples r china |
| 收录类别 | 其他 |
| 会议录 | materials science in semiconductor processing
 |
| 会议录出版者 | elsevier sci ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
| 学科主题 | 半导体材料 |
| 会议录出版地 | the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
| 语种 | 英语 |
| ISSN号 | 1369-8001 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10006]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, YW ,Dong, ZY ,Deng, AH . Electron irradiation-induced defects in InP pre-annealed at high temperature[C]. 见:11th conference on defects recognition imaging and physics in semiconductors. beijing, peoples r china. sep 13-19, 2005. |
入库方式： OAI收割
来源：半导体研究所
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