Nanostructure in the p-layer and its impacts on amorphous silicon solar cells
文献类型：会议论文
| 作者 | Liao, XB (Liao, Xianbo) ; Du, WH (Du, Wenhui) ; Yang, XS (Yang, Xiesen) ; Povolny, H (Povolny, Henry) ; Xiang, XB (Xiang, Xianbi) ; Deng, XM (Deng, Xunming) ; Sun, K (Sun, Kai) |
| 出版日期 | 2006 |
| 会议名称 | 21st international conference on amorphous and nanocrystalline semiconductors |
| 会议日期 | sep 04-09, 2005 |
| 会议地点 | lisbon, portugal |
| 关键词 | amorphous semiconductors |
| 页码 | 352 (9-20): 1841-1846 |
| 通讯作者 | liao, xb, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: xbliao2003@yahoo.com |
| 中文摘要 | the open circuit voltage (v-oc) of n-i-p type hydrogenated amorphous silicon (a-si:h) solar cells has been examined by means of experimental and numerical modeling. the i- and p-layer limitations on v-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using raman spectroscopy, high resolution transmission electron microscopy (hrtem), optical transmittance and activation energy of dark-conductivity. the n-i-p a-si:h solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of v-oc from 1.042 v to 0.369 v, under identical i- and n-layer conditions. it is found that the nanocrystalline silicon (nc-si:h) p-layer with a certain nanocrystalline volume fraction leads to a higher v-oc. the optimum p-layer material for n-i-p type a-si:h solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 elsevier b.v. all rights reserved. |
| 英文摘要 | the open circuit voltage (v-oc) of n-i-p type hydrogenated amorphous silicon (a-si:h) solar cells has been examined by means of experimental and numerical modeling. the i- and p-layer limitations on v-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using raman spectroscopy, high resolution transmission electron microscopy (hrtem), optical transmittance and activation energy of dark-conductivity. the n-i-p a-si:h solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of v-oc from 1.042 v to 0.369 v, under identical i- and n-layer conditions. it is found that the nanocrystalline silicon (nc-si:h) p-layer with a certain nanocrystalline volume fraction leads to a higher v-oc. the optimum p-layer material for n-i-p type a-si:h solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 elsevier b.v. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; univ toledo, dept phys & astron, toledo, oh 43606 usa; univ michigan, electron microbeam anal lab, ann arbor, mi 48109 usa |
| 收录类别 | 其他 |
| 会议录 | journal of non-crystalline solids
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-3093 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10008]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liao, XB ,Du, WH ,Yang, XS ,et al. Nanostructure in the p-layer and its impacts on amorphous silicon solar cells[C]. 见:21st international conference on amorphous and nanocrystalline semiconductors. lisbon, portugal. sep 04-09, 2005. |
入库方式： OAI收割
来源：半导体研究所
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