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Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells
文献类型：会议论文
| 作者 | Hu ZH (Hu Zhihua) ; Liao XB (Liao Xianbo) ; Diao HW (Diao Hongwei) ; Cai Y (Cai Yi) ; Zhang SB (Zhang Shibin) ; Fortunato E (Fortunato Elvira) ; Martins R (Martins Rodrigo) |
| 出版日期 | 2006 |
| 会议名称 | 21st international conference on amorphous and nanocrystalline semiconductors |
| 会议日期 | sep 04-09, 2005 |
| 会议地点 | lisbon, portugal |
| 关键词 | silicon |
| 页码 | 352 (9-20): 1900-1903 |
| 通讯作者 | hu, zh, new univ lisbon, dept mat sci, p-2829516 caparica, portugal. 电子邮箱地址: zhu@uninova.pt |
| 中文摘要 | a wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-si:h) window layer was prepared with a conventional rf-pecvd system under large h dilution condition, moderate power density, high pressure and low substrate temperature. the optoelectrical and structural properties of this novel material have been investigated by raman and uv-vis transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous sihx matrix and with a widened bandgap. the observed downshift of the optical phonon raman spectra (514.4 cm(-1)) from crystalline si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the si nanocrystallites. by using this kind of p-layer, a-si:h solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a v c of 0.90 v, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 elsevier b.v. all rights reserved. |
| 英文摘要 | a wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-si:h) window layer was prepared with a conventional rf-pecvd system under large h dilution condition, moderate power density, high pressure and low substrate temperature. the optoelectrical and structural properties of this novel material have been investigated by raman and uv-vis transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous sihx matrix and with a widened bandgap. the observed downshift of the optical phonon raman spectra (514.4 cm(-1)) from crystalline si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the si nanocrystallites. by using this kind of p-layer, a-si:h solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a v c of 0.90 v, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 elsevier b.v. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; new univ lisbon, dept mat sci, p-2829516 caparica, portugal; new univ lisbon, cemop, uninova, fac sci & technol, p-2829516 caparica, portugal; chinese acad sci, inst semicond, beijing 100083, peoples r china; kunming inst phys, kunming, yunnan, peoples r china |
| 收录类别 | 其他 |
| 会议录 | journal of non-crystalline solids
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-3093 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10010]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hu ZH ,Liao XB ,Diao HW ,et al. Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells[C]. 见:21st international conference on amorphous and nanocrystalline semiconductors. lisbon, portugal. sep 04-09, 2005. |
入库方式： OAI收割
来源：半导体研究所
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