Light-induced changes in diphasic nanocrystalline silicon films and solar cells
文献类型：会议论文
| 作者 | Hao, HY (Hao, Huiying) ; Liao, XB (Liao, Xianbo) ; Zeng, XB (Zeng, Xiangbo) ; Diao, HW (Diao, Hongwei) ; Xu, Y (Xu, Ying) ; Kong, GL (Kong, Guanglin) |
| 出版日期 | 2006 |
| 会议名称 | 21st international conference on amorphous and nanocrystalline semiconductors |
| 会议日期 | sep 04-09, 2005 |
| 会议地点 | lisbon, portugal |
| 关键词 | silicon |
| 页码 | 352 (9-20): 1904-1908 |
| 通讯作者 | hao, hy, chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china. 电子邮箱地址: hyhao@red.semi.ac.cn |
| 中文摘要 | a series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (vhf-pecvd). it was observed that after light soaking the open circuit voltage (v-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. it was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. these results provide experimental evidence for the conjecture that the light-induced increase in v-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 elsevier b.v. all rights reserved. |
| 英文摘要 | a series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (vhf-pecvd). it was observed that after light soaking the open circuit voltage (v-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. it was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. these results provide experimental evidence for the conjecture that the light-induced increase in v-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 elsevier b.v. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china; china univ geosci, sch mat sci & technol, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议录 | journal of non-crystalline solids
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-3093 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10012]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hao, HY ,Liao, XB ,Zeng, XB ,et al. Light-induced changes in diphasic nanocrystalline silicon films and solar cells[C]. 见:21st international conference on amorphous and nanocrystalline semiconductors. lisbon, portugal. sep 04-09, 2005. |
入库方式： OAI收割
来源：半导体研究所
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