Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers
文献类型：会议论文
| 作者 | Xu Y (Xu Ying) ; Hu ZH (Hu Zhihua) ; Diao HW (Diao Hongwei) ; Cai Y (Cai Yi) ; Zhang SB (Zhang Shibin) ; Zeng XB (Zeng Xiangbo) ; Hao HY (Hao Huiying) ; Liao XB (Liao Xianbo) ; Fortunato E (Fortunato Elvira) ; Martins R (Martins Rodrigo) |
| 出版日期 | 2006 |
| 会议名称 | 21st international conference on amorphous and nanocrystalline semiconductors |
| 会议日期 | sep 04-09, 2005 |
| 会议地点 | lisbon, portugal |
| 关键词 | silicon |
| 页码 | 352 (9-20): 1972-1975 |
| 通讯作者 | hu, zh, new univ lisbon, dept mat sci, monte caparica, p-2829516 caparica, almada, portugal. 电子邮箱地址: zhu@uninova.pt |
| 中文摘要 | hydrogenated nanocrystalline silicon (nc-si:h) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-si) wafers. the nc-si:h n-layers were deposited by radio-frequency (rf) plasma enhanced chemical vapor deposition (pecvd), and characterized using raman spectroscopy, optical transmittance and activation energy of dark-conductivity. the nc-si:h n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. heterojunction solar cells incorporated with the nc-si n-layer were fabricated using configuration of ag (100 nm)/1t0 (80 nm)/n-nc-si:h (15 nm)/buffer a-si:h/p-c-si (300 mu m)/al (200 nm), where a very thin intrinsic a-si:h buffer layer was used to passivate the p-c-si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. the results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 elsevier b.v. all rights reserved. |
| 英文摘要 | hydrogenated nanocrystalline silicon (nc-si:h) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-si) wafers. the nc-si:h n-layers were deposited by radio-frequency (rf) plasma enhanced chemical vapor deposition (pecvd), and characterized using raman spectroscopy, optical transmittance and activation energy of dark-conductivity. the nc-si:h n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. heterojunction solar cells incorporated with the nc-si n-layer were fabricated using configuration of ag (100 nm)/1t0 (80 nm)/n-nc-si:h (15 nm)/buffer a-si:h/p-c-si (300 mu m)/al (200 nm), where a very thin intrinsic a-si:h buffer layer was used to passivate the p-c-si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. the results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 elsevier b.v. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; new univ lisbon, dept mat sci, p-2829516 caparica, almada, portugal; new univ lisbon, cemop, p-2829516 caparica, almada, portugal; new univ lisbon, uninova, fac sci & technol, p-2829516 caparica, almada, portugal; chinese acad sci, inst semicond, beijing 100083, peoples r china; kunming inst phys, kunming, yunnan, peoples r china |
| 收录类别 | 其他 |
| 会议录 | journal of non-crystalline solids
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-3093 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10014]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu Y ,Hu ZH ,Diao HW ,et al. Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers[C]. 见:21st international conference on amorphous and nanocrystalline semiconductors. lisbon, portugal. sep 04-09, 2005. |
入库方式： OAI收割
来源：半导体研究所
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