Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
文献类型：会议论文
| 作者 | Jiang, DS ; Qu, YH ; Ni, HQ ; Wu, DH ; Xu, YQ ; Niu, ZC |
| 出版日期 | 2006 |
| 会议名称 | 3rd international conference on materials for advanced technologies/9th international conference on advanced materials |
| 会议日期 | jul 03-08, 2005 |
| 会议地点 | singapore, singapore |
| 关键词 | molecular beam epitaxy |
| 页码 | 288 (1): 12-17 |
| 通讯作者 | jiang, ds, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dsjiang@red.semi.ac.cn |
| 中文摘要 | it is found that both methods using either continuous sb supply or pre-deposition of a very thin sb layer are efficient for the sb-assisted molecular beam epitaxy growth of highly strained ingaas/gaas quantum wells (qws). the emission of qws is extended to long wavelength close to 1.25 mu m with high luminescence efficiency at room temperature. the influence of rapid thermal annealing (rta) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained qws. a relatively low rta temperature of 700 degrees c with a short duration of 10 s is suggested for optimizing the annealing effect. (c) 2005 elsevier b.v. all rights reserved. |
| 英文摘要 | it is found that both methods using either continuous sb supply or pre-deposition of a very thin sb layer are efficient for the sb-assisted molecular beam epitaxy growth of highly strained ingaas/gaas quantum wells (qws). the emission of qws is extended to long wavelength close to 1.25 mu m with high luminescence efficiency at room temperature. the influence of rapid thermal annealing (rta) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained qws. a relatively low rta temperature of 700 degrees c with a short duration of 10 s is suggested for optimizing the annealing effect. (c) 2005 elsevier b.v. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; int union mat res soc.; mat res soc singapore.; suntec int convent & exhibit ctr.; chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | int union mat res soc.; mat res soc singapore.; suntec int convent & exhibit ctr. |
| 会议录 | journal of crystal growth
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体物理 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10040]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang, DS,Qu, YH,Ni, HQ,et al. Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy[C]. 见:3rd international conference on materials for advanced technologies/9th international conference on advanced materials. singapore, singapore. jul 03-08, 2005. |
入库方式： OAI收割
来源：半导体研究所
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