A V-shaped module technique for promoting generation photocurrent density of silicon solar cells
文献类型：会议论文
| 作者 | Li, JM ; Chong, M ; Duan, XF ; Xu, JD ; Gao, M ; Wang, FL |
| 出版日期 | 2004 |
| 会议名称 | 5th international conference on thin film physics and applications |
| 会议日期 | may 31-jun 02, 2004 |
| 会议地点 | shanghai, peoples r china |
| 关键词 | silicon solar cells V-shaped structure |
| 页码 | 5774: 466-469 |
| 通讯作者 | li, jm, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | a v-shaped solar cell module consists of two tilted mono-crystalline cells [j. li, china patent no. 200410007708.6 (march, 2004)]. the angle included between the two tilted cells is 90 degrees. the two cells were fabricated by using polished silicon wafers. the scheme of both-side polished wafers has been proposed to reduce optical loss. compared to solar cells in a planar way, the v-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. the following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating. |
| 英文摘要 | a v-shaped solar cell module consists of two tilted mono-crystalline cells [j. li, china patent no. 200410007708.6 (march, 2004)]. the angle included between the two tilted cells is 90 degrees. the two cells were fabricated by using polished silicon wafers. the scheme of both-side polished wafers has been proposed to reduce optical loss. compared to solar cells in a planar way, the v-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. the following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:31z (gmt). no. of bitstreams: 1 2417.pdf: 138807 bytes, checksum: d31c5be83e90bc02bb8818f21ac5f0b7 (md5) previous issue date: 2004; chinese phys soc.; shanghai phys soc.; natl nat sci fdn china.; e china normal univ, sch informat sci & technol.; fudan univ, appl surface phys lab.; natl lab infrared phys.; cas, shanghai inst tech phys.; e china normal univ, key lab opt & magnet resonance spectroscopy.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese phys soc.; shanghai phys soc.; natl nat sci fdn china.; e china normal univ, sch informat sci & technol.; fudan univ, appl surface phys lab.; natl lab infrared phys.; cas, shanghai inst tech phys.; e china normal univ, key lab opt & magnet resonance spectroscopy. |
| 会议录 | fifth international conference on thin film physics and applications丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie)
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-5755-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10068]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li, JM,Chong, M,Duan, XF,et al. A V-shaped module technique for promoting generation photocurrent density of silicon solar cells[C]. 见:5th international conference on thin film physics and applications. shanghai, peoples r china. may 31-jun 02, 2004. |
入库方式： OAI收割
来源：半导体研究所
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