Compact polarization-insensitive arrayed waveguide grating based on SOI material
文献类型：会议论文
| 作者 | Fang, Q ; Li, F ; Liu, YL |
| 出版日期 | 2005 |
| 会议名称 | conference on optoelectronic devices and integration |
| 会议日期 | nov 08-11, 2004 |
| 会议地点 | beijing, peoples r china |
| 关键词 | arrayed waveguide grating compact polarization-insensitive silicon on insulator SILICON-ON-INSULATOR WAVELENGTH DEMULTIPLEXER MULTIPLEXER INP SI |
| 页码 | pts 1 and 2 5644: 769-776 part 1-2 |
| 通讯作者 | fang, q, chinese acad sci, inst semicond, opt elect res & dev ctr, beijing 100083, peoples r china. |
| 中文摘要 | a compact polarization-insensitive 8x8 arrayed waveguide grating with 100ghz channel spacing at 1.55 mu m is presented on the material of silicon on insulator (soi). increasing the epitaxial layer thickness can reduce the birefringence of the waveguide, but the wvaeguide's bend radius also increases at the same time. we choose the soi wafer with 3.0 mu m epitaxial layer to reduce the device's size and designed the appropriate structure of rib wave-guides to eliminate the polarization dependant wavelength shift. compared to the other methods of eliminating the polarization dependant wavelength shift, the method is convenient and easy to control the polarization without additional etching process. the index differences between te0 and tm0 of straight and bend waveguides are 1.4x10(-5) and 3.9x10(-5), respectively. the results showed that the polarization dependant wavelength shift is 0.1nm, and the device size is 1.5x1.0 cm(2). |
| 英文摘要 | a compact polarization-insensitive 8x8 arrayed waveguide grating with 100ghz channel spacing at 1.55 mu m is presented on the material of silicon on insulator (soi). increasing the epitaxial layer thickness can reduce the birefringence of the waveguide, but the wvaeguide's bend radius also increases at the same time. we choose the soi wafer with 3.0 mu m epitaxial layer to reduce the device's size and designed the appropriate structure of rib wave-guides to eliminate the polarization dependant wavelength shift. compared to the other methods of eliminating the polarization dependant wavelength shift, the method is convenient and easy to control the polarization without additional etching process. the index differences between te0 and tm0 of straight and bend waveguides are 1.4x10(-5) and 3.9x10(-5), respectively. the results showed that the polarization dependant wavelength shift is 0.1nm, and the device size is 1.5x1.0 cm(2).; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:31z (gmt). no. of bitstreams: 1 2422.pdf: 402356 bytes, checksum: 897f9cb4316ea3e3c2926e6b7c04f372 (md5) previous issue date: 2005; spie.; chinese opt soc.; chinese acad sci, inst semicond, opt elect res & dev ctr, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | optoelectronic devices and integration丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie)
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-5599-7 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10078]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fang, Q,Li, F,Liu, YL. Compact polarization-insensitive arrayed waveguide grating based on SOI material[C]. 见:conference on optoelectronic devices and integration. beijing, peoples r china. nov 08-11, 2004. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。