High performance resonant tunneling diode on a new material structure
文献类型：会议论文
| 作者 | Wang JL ; Liu ZL ; Wang LC ; Zeng YP ; Yang FH ; Bai YX |
| 出版日期 | 2004 |
| 会议名称 | 7th international conference on solid-state and integrated circuits technology |
| 会议日期 | oct 18-21, 2004 |
| 会议地点 | beijing, peoples r china |
| 关键词 | resonant tunneling diode |
| 页码 | vols 1- 3 proceedings: 648-650 |
| 通讯作者 | wang, jl, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | a new material structure with al0.22ga0.78as/in0.15ga0.85as/gaas emitter spacer layer and gaas/in0.15ga0.85as/gaas well for resonant tunneling diodes is designed and the corresponding device is fabricated. rtds dc characteristics are measured at room temperature. peak-to-valley current ratio (pvcr) is 7.44 for rtd analysis on these results suggests that the material structure will be helpful to improve the quality, of rtd. |
| 英文摘要 | a new material structure with al0.22ga0.78as/in0.15ga0.85as/gaas emitter spacer layer and gaas/in0.15ga0.85as/gaas well for resonant tunneling diodes is designed and the corresponding device is fabricated. rtds dc characteristics are measured at room temperature. peak-to-valley current ratio (pvcr) is 7.44 for rtd analysis on these results suggests that the material structure will be helpful to improve the quality, of rtd.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ. |
| 会议录 | 2004 7th international conference on solid-state and integrated circuits technology
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 微电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-8511-x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10086]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang JL,Liu ZL,Wang LC,et al. High performance resonant tunneling diode on a new material structure[C]. 见:7th international conference on solid-state and integrated circuits technology. beijing, peoples r china. oct 18-21, 2004. |
入库方式： OAI收割
来源：半导体研究所
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