A simulation model of body contact structure in PD SOI analogue circuit
文献类型：会议论文
| 作者 | Jiang, F ; Liu, ZL |
| 出版日期 | 2004 |
| 会议名称 | 7th international conference on solid-state and integrated circuits technology |
| 会议日期 | oct 18-21, 2004 |
| 会议地点 | beijing, peoples r china |
| 关键词 | PID SOI technology body contact |
| 页码 | vols 1- 3 proceedings: 1019-1021 |
| 通讯作者 | jiang, f, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | as a solution of accurate simulation of the body effect in pd soi analogue circuit, a simulation model of distributed body contact resistance and parasitical capacitance is presented. based on this model, we have designed and simulated a sense amplifier that applied to v a 0.8um pd soi 64k sram. |
| 英文摘要 | as a solution of accurate simulation of the body effect in pd soi analogue circuit, a simulation model of distributed body contact resistance and parasitical capacitance is presented. based on this model, we have designed and simulated a sense amplifier that applied to v a 0.8um pd soi 64k sram.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:33z (gmt). no. of bitstreams: 1 2430.pdf: 135048 bytes, checksum: 0e719c4a738295672b36aeb27194cda3 (md5) previous issue date: 2004; chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ. |
| 会议录 | 2004 7th international conference on solid-state and integrated circuits technology
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 微电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-8511-x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10094]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang, F,Liu, ZL. A simulation model of body contact structure in PD SOI analogue circuit[C]. 见:7th international conference on solid-state and integrated circuits technology. beijing, peoples r china. oct 18-21, 2004. |
入库方式： OAI收割
来源：半导体研究所
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