A silicon capacitive microphone based on oxidized porous silicon sacrificial technology
文献类型：会议论文
| 作者 | Ning, J ; Liu, ZL ; Liu, HZ ; Ge, YC |
| 出版日期 | 2004 |
| 会议名称 | 7th international conference on solid-state and integrated circuits technology |
| 会议日期 | oct 18-21, 2004 |
| 会议地点 | beijing, peoples r china |
| 关键词 | silicon capacitive microphone oxidized porous silicon sacrificial layer |
| 页码 | vols 1- 3 proceedings: 1872-1875 |
| 通讯作者 | ning, j, chinese acad sci, microelect r&d ctr, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | in this paper, a new capacitive microphone fabrication technology is proposed. it describes using the oxidized porous silicon sacrificial technology to make air gap and using koh etching technique to make the backplate containing acoustic holes based on the principle that the heavy p(+)-doping silicon can be nearly etched in koh solution. the innovation of the method is using oxidized porous silicon technology. the sensitivity of the fabricated microphone is from -55db ( 1.78mv/pa) to -45db (5.6mv/pa) in the frequency range of 500hz to 25khz. its cut-off frequency is higher than 20khz. |
| 英文摘要 | in this paper, a new capacitive microphone fabrication technology is proposed. it describes using the oxidized porous silicon sacrificial technology to make air gap and using koh etching technique to make the backplate containing acoustic holes based on the principle that the heavy p(+)-doping silicon can be nearly etched in koh solution. the innovation of the method is using oxidized porous silicon technology. the sensitivity of the fabricated microphone is from -55db ( 1.78mv/pa) to -45db (5.6mv/pa) in the frequency range of 500hz to 25khz. its cut-off frequency is higher than 20khz.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:33z (gmt). no. of bitstreams: 1 2431.pdf: 154792 bytes, checksum: 866a47361db3eceab5589607d0a5e19b (md5) previous issue date: 2004; chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.; chinese acad sci, microelect r&d ctr, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ. |
| 会议录 | 2004 7th international conference on solid-state and integrated circuits technology
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 微电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-8511-x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10096]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ning, J,Liu, ZL,Liu, HZ,et al. A silicon capacitive microphone based on oxidized porous silicon sacrificial technology[C]. 见:7th international conference on solid-state and integrated circuits technology. beijing, peoples r china. oct 18-21, 2004. |
入库方式： OAI收割
来源：半导体研究所
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