Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces
文献类型：会议论文
| 作者 | Sun, GS ; Ning, J ; Zhang, YX ; Gao, X ; Wang, L ; Zhao, WS ; Zeng, YP ; Li, JM |
| 出版日期 | 2004 |
| 会议名称 | 7th international conference on solid-state and integrated circuits technology |
| 会议日期 | oct 18-21, 2004 |
| 会议地点 | beijing, peoples r china |
| 关键词 | 4H-SiC LPCVD homoepitaxial growth thermal oxidization MOS structures HOT-WALL CVD |
| 页码 | vols 1- 3 proceedings: 2349-2352 |
| 通讯作者 | sun, gs, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | homoepitaxial growth of 4h-sic on off-oriented n-type si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (lpcvd) reactor with sih4 and c2h4 at temperature of 1500 c and pressure of 20 torr. the surface morphology and intentional in-situ nh3 doping in 4h-sic epilayers were investigated by using atomic force microscopy (afm) and secondary ion mass spectroscopy (sims). thermal oxidization of 4h-sic homoepitaxial layers was conducted in a dry o-2 and h-2 atmosphere at temperature of 1150 c. the oxide was investigated by employing x-ray photoelectron spectroscopy (xps). 4h-sic mos structures were obtained and their c-v characteristics were presented. |
| 英文摘要 | homoepitaxial growth of 4h-sic on off-oriented n-type si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (lpcvd) reactor with sih4 and c2h4 at temperature of 1500 c and pressure of 20 torr. the surface morphology and intentional in-situ nh3 doping in 4h-sic epilayers were investigated by using atomic force microscopy (afm) and secondary ion mass spectroscopy (sims). thermal oxidization of 4h-sic homoepitaxial layers was conducted in a dry o-2 and h-2 atmosphere at temperature of 1150 c. the oxide was investigated by employing x-ray photoelectron spectroscopy (xps). 4h-sic mos structures were obtained and their c-v characteristics were presented.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:34z (gmt). no. of bitstreams: 1 2437.pdf: 205995 bytes, checksum: 49be8168ddaa8ea37bffcd064888da65 (md5) previous issue date: 2004; chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ. |
| 会议录 | 2004 7th international conference on solid-state and integrated circuits technology
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| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-8511-x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10108]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun, GS,Ning, J,Zhang, YX,et al. Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces[C]. 见:7th international conference on solid-state and integrated circuits technology. beijing, peoples r china. oct 18-21, 2004. |
入库方式： OAI收割
来源：半导体研究所
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