Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition
文献类型：会议论文
| 作者 | Wang, QY ; Shen, WJ ; Wang, J ; Wang, JH ; Zeng, YP ; Li, JM |
| 出版日期 | 2004 |
| 会议名称 | 7th international conference on solid-state and integrated circuits technology |
| 会议日期 | oct 18-21, 2004 |
| 会议地点 | beijing, peoples r china |
| 关键词 | ULTRAVIOLET-LASER EMISSION THIN-FILMS ZINC-OXIDE ROOM-TEMPERATURE |
| 页码 | vols 1- 3 proceedings: 2370-2373 |
| 通讯作者 | wang, qy, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | quality zno films were successfully grown on si(100) substrate by low-pressure metal organic chemical vapor deposition method in temperature range of 300-500 degrees c using dezn and n2o as precursor and oxygen source respectively. the crystal structure, optical properties and surface morphology of zno films were characterized by x-ray diffraction, optical refection and atomic force microscopy technologies. it was demonstrated that the crystalline structure and surface morphology of zno films strongly depend on the growth temperature. |
| 英文摘要 | quality zno films were successfully grown on si(100) substrate by low-pressure metal organic chemical vapor deposition method in temperature range of 300-500 degrees c using dezn and n2o as precursor and oxygen source respectively. the crystal structure, optical properties and surface morphology of zno films were characterized by x-ray diffraction, optical refection and atomic force microscopy technologies. it was demonstrated that the crystalline structure and surface morphology of zno films strongly depend on the growth temperature.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:34z (gmt). no. of bitstreams: 1 2438.pdf: 179621 bytes, checksum: 83df8e6cc498c6c2b7398a66d0118e57 (md5) previous issue date: 2004; chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ. |
| 会议录 | 2004 7th international conference on solid-state and integrated circuits technology
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 0-7803-8511-x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10110]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, QY,Shen, WJ,Wang, J,et al. Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition[C]. 见:7th international conference on solid-state and integrated circuits technology. beijing, peoples r china. oct 18-21, 2004. |
入库方式： OAI收割
来源：半导体研究所
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