Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
文献类型：会议论文
| 作者 | Zhao, YW ; Dong, ZY |
| 出版日期 | 2005 |
| 会议名称 | 17th international conference on indium phosphide and related materials |
| 会议日期 | may 08-12, 2005 |
| 会议地点 | glasgow, scotland |
| 关键词 | ENCAPSULATED CZOCHRALSKI INP SEMICONDUCTOR COMPOUND-CRYSTALS STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY DEEP-LEVEL DEFECTS ANNEALING AMBIENT POINT-DEFECTS FE PHOSPHIDE DONORS |
| 页码 | 163-166 |
| 通讯作者 | zhao, yw, chinese acad sci, ctr mat sci, inst semicond, pob 912, beijing 10083, peoples r china. |
| 中文摘要 | semi-insulating (si) inp obtained by iron phosphide ambient annealing has very low concentration of deep level defects and better electrical property than si-inp annealed in phosphorus ambient. the defect suppression phenomenon correlates with fe diffusion and substitution in the annealing process. analysis of the experimental result suggests that a high activation ratio of incorporated fe in inp has an effect of defect suppression in fe-doped and fe-diffused si-inp. |
| 英文摘要 | semi-insulating (si) inp obtained by iron phosphide ambient annealing has very low concentration of deep level defects and better electrical property than si-inp annealed in phosphorus ambient. the defect suppression phenomenon correlates with fe diffusion and substitution in the annealing process. analysis of the experimental result suggests that a high activation ratio of incorporated fe in inp has an effect of defect suppression in fe-doped and fe-diffused si-inp.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:36z (gmt). no. of bitstreams: 1 2446.pdf: 653430 bytes, checksum: 011193fad1430dbfcca1b034f749e94c (md5) previous issue date: 2005; ieee.; chinese acad sci, ctr mat sci, inst semicond, beijing 10083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | ieee. |
| 会议录 | 2005 international conference on indium phosphide and related materials丛书标题: conference proceedings - indium phosphide and related materials
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体物理 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISSN号 | 1092-8669 |
| ISBN号 | 0-7803-8891-7 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10126]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, YW,Dong, ZY. Improvement of the electrical property of semi-insulating InP by suppression of compensation defects[C]. 见:17th international conference on indium phosphide and related materials. glasgow, scotland. may 08-12, 2005. |
入库方式： OAI收割
来源：半导体研究所
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