An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags
文献类型：会议论文
| 作者 | Feng P (Feng Peng) ; Li YL (Li Yunlong) ; Wu NJ (Wu Nanjian) |
| 出版日期 | 2009 |
| 会议名称 | the ieee 2009 custom integrated circuits conference |
| 会议日期 | 2009 |
| 会议地点 | san jose, ca |
| 页码 | 713-716 |
| 通讯作者 | feng, p, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail address: nanjian@red.semi.ac.cn |
| 英文摘要 | an ultra low power non-volatile memory is designed in a standard cmos process for passive rfid tags. the memory can operate in a new low power operating scheme under a wide supply voltage and clock frequency range. in the charge pump circuit the threshold voltage effect of the switch transistor is almost eliminated and the pumping efficiency of the circuit is improved. an ultra low power 192-bit memory with a register array is implemented in a 0.18 mu m standard cmos process. the measured results indicate that, for the supply voltage of 1.2 volts and the clock frequency of 780khz, the current consumption of the memory is 1.8 mu a (3.6 mu a) at the read (write) rate of 1.3mb/s (0.8kb/s).; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-13t02:52:44z no. of bitstreams: 1 an ultra low power non-volatile memory in standard cmos process for passive rfid tags.pdf: 874458 bytes, checksum: c80e61879ac7b936ab6377a6d24600eb (md5); made available in dspace on 2010-04-13t02:52:44z (gmt). no. of bitstreams: 1 an ultra low power non-volatile memory in standard cmos process for passive rfid tags.pdf: 874458 bytes, checksum: c80e61879ac7b936ab6377a6d24600eb (md5) previous issue date: 2009; ieee solid state circuits soc.; ieee electron decices soc.; 其它 |
| 收录类别 | CPCI（ISTP） |
| 合作状况 | 其它 |
| 会议主办者 | ieee solid state circuits soc.; ieee electron decices soc. |
| 会议录 | proceedings of the ieee 2009 custom integrated circuits conference: 713-716 2009
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 微电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-1-4244-4072-6 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11144]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Feng P ,Li YL ,Wu NJ . An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags[C]. 见:the ieee 2009 custom integrated circuits conference. san jose, ca. 2009. |
入库方式： OAI收割
来源：半导体研究所
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