Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach
文献类型：期刊论文
| ; | |
| 作者 | Ding Y; Fan WJ; Xu DW; Tong CZ; Liu Y; Zhao LJ; Ding, Y, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. E-mail Address: yding@ntu.edu.sg; ewjfan@ntu.edu.sg |
| 刊名 | applied physics b-lasers and optics
 ; APPLIED PHYSICS B-LASERS AND OPTICS
|
| 出版日期 | 2010 ; 2010 |
| 卷号 | 98期号:4页码:773-778 sp. iss. |
| 关键词 | SURFACE-EMITTING LASERS Surface-emitting Lasers |
| 通讯作者 | ding, y, nanyang technol univ, sch elect & elect engn, singapore 639798, singapore. e-mail address: yding@ntu.edu.sg ; ewjfan@ntu.edu.sg |
| 合作状况 | 国际 |
| 英文摘要 | we present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (vcsels) fabricated by using dielectric-free approach. the threshold current of 0.4 ma, which corresponds to the threshold current density of 0.5 ka/cm(2), differential resistance of 76 omega, and maximum output power of more than 5 mw are achieved for the dielectric-free vcsel with a square oxide aperture size of 9 mu m at room temperature (rt). l-i-v characteristics of the dielectric-free vcsel are compared with those of conventional vcsel with the similar aperture size, which indicates the way to realize low-cost, low-power consumption vcsels with extremely simple process. preliminary study of the temperature-dependent l-i characteristics and modulation response of the dielectric-free vcsel are also presented.; We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm(2), differential resistance of 76 Omega, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 mu m at room temperature (RT). L-I-V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L-I characteristics and modulation response of the dielectric-free VCSEL are also presented.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t12:45:06z no. of bitstreams: 1 low threshold current density, low resistance oxide-confined vcsel fabricated by a dielectric-free approach.pdf: 817739 bytes, checksum: 816d1e16ed36bee969a4897ac984b2c6 (md5); submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t12:45:06z no. of bitstreams: 1 low threshold current density, low resistance oxide-confined vcsel fabricated by a dielectric-free approach.pdf: 817739 bytes, checksum: 816d1e16ed36bee969a4897ac984b2c6 (md5); 国际 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2010-04-22 ; 2010-04-22 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11175]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 通讯作者 | Ding, Y, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. E-mail Address: yding@ntu.edu.sg; ewjfan@ntu.edu.sg |
| 推荐引用方式 GB/T 7714 | Ding Y,Fan WJ,Xu DW,et al. Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach, Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach[J]. applied physics b-lasers and optics, APPLIED PHYSICS B-LASERS AND OPTICS,2010, 2010,98, 98(4):773-778 sp. iss., 773-778 Sp. Iss.. |
| APA | Ding Y.,Fan WJ.,Xu DW.,Tong CZ.,Liu Y.,...&ewjfan@ntu.edu.sg.(2010).Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach.applied physics b-lasers and optics,98(4),773-778 sp. iss.. |
| MLA | Ding Y,et al."Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach".applied physics b-lasers and optics 98.4(2010):773-778 sp. iss.. |
入库方式： OAI收割
来源：半导体研究所
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