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Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures
文献类型：期刊论文
| 作者 | Zhao L ; Diao HW ; Zeng XB ; Zhou CL ; Li HL ; Wang WJ |
| 刊名 | physica b-condensed matter
 |
| 出版日期 | 2010 |
| 卷号 | 405期号:1页码:61-64 |
| 关键词 | Silicon thin film HIT solar cell Surface passivation HETEROJUNCTION SOLAR-CELLS HOT-WIRE CVD YDROGEN DILUTION N-TYPE SPECTROSCOPY OPTIMIZATION |
| 通讯作者 | zhao, l, chinese acad sci, inst elect engn, solar cell technol grp, key lab solar thermal energy & photovolta syst, beijing 100190, peoples r china. e-mail address: zhaolei@mail.iee.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | si thin films with different structures were deposited by plasma enhanced chemical vapor deposition (pecvd), and characterized via raman spectroscopy and fourier transform infrared (ftir) spectroscopy. the passivation effect of such different si thin films on crystalline si surface was investigated by minority carrier lifetime measurement via a method, called microwave photoconductive decay (mu pcd), for the application in hit (heterojunction with intrinsic thin-layer) solar cells. the results show that amorphous silicon (a-si:h) has a better passivation effect due to its relative higher h content, compared with microcrystalline (mu c-si) silicon and nanocrystalline silicon (nc-si). further, it was found that h atoms in the form of si-h bonds are more preferred than those in the form of si-h-2 bonds to passivate the crystalline si surface. (c) 2009 elsevier b.v. all rights reserved.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-04t07:10:49z no. of bitstreams: 1 70.pdf: 267937 bytes, checksum: 892b521876583523a7b93e26a0762c79 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-04t07:18:28z (gmt) no. of bitstreams: 1 70.pdf: 267937 bytes, checksum: 892b521876583523a7b93e26a0762c79 (md5); made available in dspace on 2010-04-04t07:18:28z (gmt). no. of bitstreams: 1 70.pdf: 267937 bytes, checksum: 892b521876583523a7b93e26a0762c79 (md5) previous issue date: 2010; 863 high technology research program of china 2006aa05z405; iee, cas; 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | 863 high technology research program of china 2006aa05z405; iee, cas |
| 语种 | 英语 |
| 公开日期 | 2010-04-04 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10198]  |
| 专题 | 半导体研究所_表面物理国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhao L,Diao HW,Zeng XB,et al. Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures[J]. physica b-condensed matter,2010,405(1):61-64. |
| APA | Zhao L,Diao HW,Zeng XB,Zhou CL,Li HL,&Wang WJ.(2010).Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures.physica b-condensed matter,405(1),61-64. |
| MLA | Zhao L,et al."Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures".physica b-condensed matter 405.1(2010):61-64. |
入库方式： OAI收割
来源：半导体研究所
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