On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector
文献类型：期刊论文
| 作者 | Huang JL (Huang Jian-Liang) ; Wei Y (Wei Yang) ; Ma WQ (Ma Wen-Quan) ; Yang T (Yang Tao) ; Chen LH (Chen Liang-Hui) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2010 |
| 卷号 | 59期号:5页码:3099-3106 |
| 关键词 | type II superlattice |
| 通讯作者 | wei, y, chinese acad sci, inst semicond, lab nanooptoelect, beijing 100083, peoples r china. 电子邮箱地址: wqma@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | in this paper, the detection wavelength and the electron-hole wave function overlap of inas/irxga1-xsb type ii superlattice photodetectors are numerically calculated by using the envelope function and the transfer matrix methods. the band offset is dealt with by employing the model solid theory, which already takes into account the lattice mismatch between inas and inxga1-xsb layers. firstly, the detection wavelength and the wave function overlap are investigated in dependence on the inas and inxga1-xsb layer thicknesses, the in mole fraction, and the periodic number. the results indicate that the detection wavelength increases with increasing in mole fraction, inas and inxga1-xsb layer thicknesses, respectively. when increasing the periodic number, the detection wavelength first increases distinctly for small periodic numbers then increases very slightly for large period numbers. secondly, the wave function overlap diminishes with increasing inas and inxga1-xsb layer thicknesses, while it enhances with increasing in mole fraction. the dependence of the wave function overlap on the periodic number shows the same trend as that of the detection wavelength on the periodic number. moreover, for a constant detection wavelength, the wave function overlap becomes greater when the thickness ratio of the inas over inxga1-xsb is larger.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04t14:21:45z no. of bitstreams: 0; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04t14:21:45z no. of bitstreams: 0; 其它 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-06-04 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11275]  |
| 专题 | 半导体研究所_纳米光电子实验室 |
| 推荐引用方式 GB/T 7714 | Huang JL ,Wei Y ,Ma WQ ,et al. On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector[J]. acta physica sinica,2010,59(5):3099-3106. |
| APA | Huang JL ,Wei Y ,Ma WQ ,Yang T ,&Chen LH .(2010).On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector.acta physica sinica,59(5),3099-3106. |
| MLA | Huang JL ,et al."On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector".acta physica sinica 59.5(2010):3099-3106. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。