Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers
文献类型：期刊论文
| 作者 | Xu PF (Xu Peng-Fei) ; Yang T (Yang Tao) ; Ji HM (Ji Hai-Ming) ; Cao YL (Cao Yu-Lian) ; Gu ; YX (Gu Yong-Xian) ; Liu Y (Liu Yu) ; Ma WQ (Ma Wen-Quan) ; Wang ZG (Wang Zhan-Guo) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 107期号:1页码:art. no. 013102 |
| 关键词 | energy states optical modulation quantum dot lasers THRESHOLD CURRENT WELL GAIN |
| 通讯作者 | yang, t, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. e-mail address: tyang@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | temperature-dependent modulation characteristics of 1.3 mu m inas/gaas quantum dot (qd) lasers under small signals have been carefully studied at various bias currents. based on experimental observations, it is found that the modulation bandwidth significantly increases when excited state (es) lasing emerges at high temperature. this is attributed to additional photons emitted by es lasing which contribute to the modulation response. a rate equation model including two discrete electron energy levels and the level of wetting layer has been used to investigate the temperature-dependent dynamic behavior of the qd lasers. numerical investigations confirm that the significant jump for the small signal modulation response is indeed caused by es photons. furthermore, we identify how the electron occupation probabilities of the two discrete energy levels can influence the photon density of different states and finally the modulation rate. both experiments and numerical analysis show that the modulation bandwidth of qd lasers at high temperature can be increased by injecting more carriers into the es that has larger electron state degeneracy and faster carrier's relaxation time than the ground state.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-13t13:41:29z no. of bitstreams: 1 temperature-dependent modulation characteristics for 1.3 mu m inasgaas quantum dot lasers.pdf: 474604 bytes, checksum: 9b107777456ce92eb539111795fa1274 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-13t14:14:12z (gmt) no. of bitstreams: 1 temperature-dependent modulation characteristics for 1.3 mu m inasgaas quantum dot lasers.pdf: 474604 bytes, checksum: 9b107777456ce92eb539111795fa1274 (md5); made available in dspace on 2010-04-13t14:14:12z (gmt). no. of bitstreams: 1 temperature-dependent modulation characteristics for 1.3 mu m inasgaas quantum dot lasers.pdf: 474604 bytes, checksum: 9b107777456ce92eb539111795fa1274 (md5) previous issue date: 2010; national high technology research and development program of china 2006aa03z401；national science foundation of china 60876033; 其它 |
| 学科主题 | 半导体材料 |
| 资助信息 | national high technology research and development program of china 2006aa03z401；national science foundation of china 60876033 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-13 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11148]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xu PF ,Yang T ,Ji HM ,et al. Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers[J]. journal of applied physics,2010,107(1):art. no. 013102. |
| APA | Xu PF .,Yang T .,Ji HM .,Cao YL .,Gu.,...&Wang ZG .(2010).Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers.journal of applied physics,107(1),art. no. 013102. |
| MLA | Xu PF ,et al."Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers".journal of applied physics 107.1(2010):art. no. 013102. |
入库方式： OAI收割
来源：半导体研究所
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