Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism
文献类型：期刊论文
| 作者 | Peng YC (Peng Ying-Cai) ; Fan ZD (Fan Zhi-Dong) ; Bai ZH (Bai Zhen-Hua) ; Ma L (Ma Lei) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2010 |
| 卷号 | 59期号:2页码:1169-1174 |
| 关键词 | silicon nanowires Au-Si liquid droplet alloys solid-liquid-solid growth structural characteristics SI NANOWIRES NI CATALYSTS |
| 通讯作者 | peng, yc, hebei univ, coll elect & informat engn, baoding 071002, peoples r china. e-mail address: ycpeng2002@163.com |
| 合作状况 | 国内 |
| 英文摘要 | high quality silicon nanowires (sinws) were grown directly from n-(111) silicon single crystal substrate by using au film as a metallic catalyst. the diameter and length of the formed nanowires are 30-60 nm and from several micrometers to sereral tens of micrometers, respectively. the effects of au film thickness, annealing temperature, growth time and n-2 gas flow rate on the formation of the nanowires were experimentally investigated. the results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. the formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.; submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2010-04-21t16:40:27z no. of bitstreams: 1 controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism.pdf: 1439077 bytes, checksum: 4efdcc25a502b0c8ae7944e3a800f4db (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-21t16:46:16z (gmt) no. of bitstreams: 1 controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism.pdf: 1439077 bytes, checksum: 4efdcc25a502b0c8ae7944e3a800f4db (md5); made available in dspace on 2010-04-21t16:46:16z (gmt). no. of bitstreams: 1 controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism.pdf: 1439077 bytes, checksum: 4efdcc25a502b0c8ae7944e3a800f4db (md5) previous issue date: 2010; 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-04-21 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11172]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Peng YC ,Fan ZD ,Bai ZH ,et al. Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism[J]. acta physica sinica,2010,59(2):1169-1174. |
| APA | Peng YC ,Fan ZD ,Bai ZH ,&Ma L .(2010).Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism.acta physica sinica,59(2),1169-1174. |
| MLA | Peng YC ,et al."Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism".acta physica sinica 59.2(2010):1169-1174. |
入库方式： OAI收割
来源：半导体研究所
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