A study of indium incorporation in In-rich InGaN grown by MOVPE
文献类型：期刊论文
| 作者 | Wei HY ; Song HP
|
| 刊名 | applied surface science
 |
| 出版日期 | 2010 |
| 卷号 | 256期号:10页码:3352-3356 |
| 关键词 | MOVPE In-rich InGaN Indium incorporation MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION CRITICAL THICKNESS DROPLET FORMATION PHASE-SEPARATION TEMPERATURE FILMS HETEROSTRUCTURES IMMISCIBILITY INXGA1-XN |
| 通讯作者 | guo, y, chinese acad sci, inst semicond, key lab semicond mat sci, tingshua e rd 35,pob 912, beijing 100083, peoples r china.e-mail address: guoyan@semi.ac.cn ; xlliu@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | ingan/gan heterostructures have been deposited onto (0 0 0 1) sapphire by our home-made low pressure movpe with different growth parameters. it has been noted that the indium incorporation depends by a complex way on a number of factors. in this work, the effect of substrate temperature, trimethylindium input flow and v/iii ratio on the indium incorporation has been investigated. finally, by optimizing the growth parameters, we made a series of single-phase ingan samples with indium content from 10% up to 45%.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t13:28:22z no. of bitstreams: 1 a study of indium incorporation in in-rich ingan grown by movpe.pdf: 513757 bytes, checksum: f9da299fd03c529e1314ef47bfe6ba61 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22t13:39:08z (gmt) no. of bitstreams: 1 a study of indium incorporation in in-rich ingan grown by movpe.pdf: 513757 bytes, checksum: f9da299fd03c529e1314ef47bfe6ba61 (md5); made available in dspace on 2010-04-22t13:39:08z (gmt). no. of bitstreams: 1 a study of indium incorporation in in-rich ingan grown by movpe.pdf: 513757 bytes, checksum: f9da299fd03c529e1314ef47bfe6ba61 (md5) previous issue date: 2010; national science foundation of china 60776015 60976008 ；major state basic research project of china 2006cb604907； 863 high technology r& d program of china 2007aa03z402 2007aa03z451; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national science foundation of china 60776015 60976008 ；major state basic research project of china 2006cb604907； 863 high technology r& d program of china 2007aa03z402 2007aa03z451 |
| 语种 | 英语 |
| 公开日期 | 2010-04-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11182]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Wei HY,Song HP. A study of indium incorporation in In-rich InGaN grown by MOVPE[J]. applied surface science,2010,256(10):3352-3356. |
| APA | Wei HY,&Song HP.(2010).A study of indium incorporation in In-rich InGaN grown by MOVPE.applied surface science,256(10),3352-3356. |
| MLA | Wei HY,et al."A study of indium incorporation in In-rich InGaN grown by MOVPE".applied surface science 256.10(2010):3352-3356. |
入库方式： OAI收割
来源：半导体研究所
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