Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature
文献类型：期刊论文
| 作者 | Kong N (Kong Ning) ; Liu JQ (Liu Jun-Qi) ; Li L (Li Lu) ; Liu FQ (Liu Feng-Qi) ; Wang LJ (Wang Li-Jun) ; Wang ZG (Wang Zhan-Guo) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:3页码:art. no. 038501 |
| 关键词 | WELL INFRARED PHOTODETECTORS LASER |
| 通讯作者 | kong, n, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail address: fqliu@red.semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | we present a strain-compensated inp-based ingaas/inalas photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. the detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. by careful structure design and growth, the whole epilayer has a residual strain toward inp substrate of only -2.8 x 10(-4). a clear narrow band detection spectrum centered at 4.5 mu m has been observed above room temperature for a device with 200 x 200 mu m(2) square mesa.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t13:51:39z no. of bitstreams: 1 strain-compensated ingaasinalas quantum cascade detector of 4.5 mu m operating at room temperature.pdf: 638416 bytes, checksum: 8185e1e91cef404f923408f8cb56e927 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22t14:12:03z (gmt) no. of bitstreams: 1 strain-compensated ingaasinalas quantum cascade detector of 4.5 mu m operating at room temperature.pdf: 638416 bytes, checksum: 8185e1e91cef404f923408f8cb56e927 (md5); made available in dspace on 2010-04-22t14:12:03z (gmt). no. of bitstreams: 1 strain-compensated ingaasinalas quantum cascade detector of 4.5 mu m operating at room temperature.pdf: 638416 bytes, checksum: 8185e1e91cef404f923408f8cb56e927 (md5) previous issue date: 2010; national science fund for distinguished young scholars of china 60525406 ; national natural science foundation of china 60736031 60806018 60906026 10990100; national basic research program of china 2006cb604903 ; national high-tech r&d program of china 2007aa03z446 2009aa03z403; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national science fund for distinguished young scholars of china 60525406 ; national natural science foundation of china 60736031 60806018 60906026 10990100; national basic research program of china 2006cb604903 ; national high-tech r&d program of china 2007aa03z446 2009aa03z403 |
| 语种 | 英语 |
| 公开日期 | 2010-04-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11187]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Kong N ,Liu JQ ,Li L ,et al. Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature[J]. chinese physics letters,2010,27(3):art. no. 038501. |
| APA | Kong N ,Liu JQ ,Li L ,Liu FQ ,Wang LJ ,&Wang ZG .(2010).Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature.chinese physics letters,27(3),art. no. 038501. |
| MLA | Kong N ,et al."Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature".chinese physics letters 27.3(2010):art. no. 038501. |
入库方式： OAI收割
来源：半导体研究所
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