A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser
文献类型：期刊论文
| 作者 | Ji HM (Ji Hai-Ming) ; Yang T (Yang Tao) ; Cao YL (Cao Yu-Lian) ; Xu PF (Xu Peng-Fei) ; Gu YX (Gu Yong-Xian) ; Liu Y (Liu Yu) ; Xie L (Xie Liang) ; Wang ZG (Wang Zhan-Guo) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:3页码:art. no. 034209 |
| 关键词 | ROOM-TEMPERATURE PERFORMANCE |
| 通讯作者 | yang, t, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. e-mail address: tyang@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | we demonstrate 10 gb/s directly-modulated 1.3 mu m inas quantum-dot (qd) lasers grown on gaas substrates by molecular beam epitaxy. the active region of the qd lasers consists of five-stacked inas qd layers. ridge-waveguide lasers with a ridge width of 4 mu m and a cavity length of 600 mu m are fabricated with standard lithography and wet etching techniques. it is found that the lasers emit at 1293 nm with a very low threshold current of 5 ma at room temperature. furthermore, clear eye-opening patterns under 10 gb/s modulation rate at temperatures of up to 50 degrees c are achieved by the qd lasers. the results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t13:59:02z no. of bitstreams: 1 a 10 gbs directly-modulated 1.3 mu m inasgaas quantum-dot laser.pdf: 527679 bytes, checksum: ce090f463c931143e77b37f76db2b6ea (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22t14:12:18z (gmt) no. of bitstreams: 1 a 10 gbs directly-modulated 1.3 mu m inasgaas quantum-dot laser.pdf: 527679 bytes, checksum: ce090f463c931143e77b37f76db2b6ea (md5); made available in dspace on 2010-04-22t14:12:19z (gmt). no. of bitstreams: 1 a 10 gbs directly-modulated 1.3 mu m inasgaas quantum-dot laser.pdf: 527679 bytes, checksum: ce090f463c931143e77b37f76db2b6ea (md5) previous issue date: 2010; national high-technology research and development program of china 2006aa03z401; chinese academy of sciences; national natural science foundation of china 60876033; 其它 |
| 学科主题 | 半导体材料 |
| 资助信息 | national high-technology research and development program of china 2006aa03z401; chinese academy of sciences; national natural science foundation of china 60876033 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11189]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ji HM ,Yang T ,Cao YL ,et al. A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser[J]. chinese physics letters,2010,27(3):art. no. 034209. |
| APA | Ji HM .,Yang T .,Cao YL .,Xu PF .,Gu YX .,...&Wang ZG .(2010).A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser.chinese physics letters,27(3),art. no. 034209. |
| MLA | Ji HM ,et al."A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser".chinese physics letters 27.3(2010):art. no. 034209. |
入库方式： OAI收割
来源：半导体研究所
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