Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers
文献类型：期刊论文
| 作者 | Xu DW ; Tong CZ ; Yoon SF ; Zhao LJ ; Ding Y ; Fan WJ |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 107期号:6页码:art. no. 063107 |
| 关键词 | gallium arsenide III-V semiconductors indium compounds quantum dot lasers surface emitting lasers DEPENDENT OUTPUT CHARACTERISTICS SEMICONDUCTOR-LASERS 1.3-MU-M VCSELS WELL CONFINEMENT POWER |
| 通讯作者 | xu, dw, nanyang technol univ, sch elect & elect engn, singapore 639798, singapore. 电子邮箱地址: n060085@ntu.edu.sg |
| 合作状况 | 国际 |
| 英文摘要 | the self-heating effect in 1.3 mu m p-doped inas/gaas quantum dot (qd) vertical cavity surface emitting lasers (vcsels) has been investigated using a self-consistent theoretical model. good agreement is obtained between theoretical analysis and experimental results under pulsed operation. the results show that in p-doped qd vcsels, the output power is significantly influenced by self-heating. about 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). this value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). the temperature increase in the active region and injection efficiency of the qds are calculated and discussed based on the different oxide aperture areas and duty cycle.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28t13:41:08z no. of bitstreams: 1 self-heating effect in 1.3 mu m p-doped inasgaas quantum dot vertical cavity surface emitting lasers.pdf: 267331 bytes, checksum: a4ebdae52c732b536fe679fb71c8be46 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-28t13:50:15z (gmt) no. of bitstreams: 1 self-heating effect in 1.3 mu m p-doped inasgaas quantum dot vertical cavity surface emitting lasers.pdf: 267331 bytes, checksum: a4ebdae52c732b536fe679fb71c8be46 (md5); made available in dspace on 2010-04-28t13:50:15z (gmt). no. of bitstreams: 1 self-heating effect in 1.3 mu m p-doped inasgaas quantum dot vertical cavity surface emitting lasers.pdf: 267331 bytes, checksum: a4ebdae52c732b536fe679fb71c8be46 (md5) previous issue date: 2010; serc 0621200015; 国际 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 资助信息 | serc 0621200015 |
| 语种 | 英语 |
| 公开日期 | 2010-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11208]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xu DW,Tong CZ,Yoon SF,et al. Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers[J]. journal of applied physics,2010,107(6):art. no. 063107. |
| APA | Xu DW,Tong CZ,Yoon SF,Zhao LJ,Ding Y,&Fan WJ.(2010).Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers.journal of applied physics,107(6),art. no. 063107. |
| MLA | Xu DW,et al."Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers".journal of applied physics 107.6(2010):art. no. 063107. |
入库方式： OAI收割
来源：半导体研究所
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