A Photovoltaic InAs Quantum-Dot Infrared Photodetector
文献类型：期刊论文
| 作者 | Tang GH (Tang Guang-Hua) ; Xu B (Xu Bo) ; Jiang ; LW (Jiang Li-Wen) ; Kong JX (Kong Jin-Xia) ; Kong ; N (Kong Ning) ; Liang DC (Liang De-Chun) ; Liang P (Liang Ping) ; Ye XL (Ye Xiao-Ling) ; Jin P (Jin Peng) ; Liu FQ (Liu Feng-Qi) ; Chen YH (Chen Yong-Hai) ; Wang ZG (Wang Zhan-Guo) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:4页码:art. no. 047801 |
| 关键词 | MU-M TEMPERATURE DETECTORS OPERATION |
| 通讯作者 | tang, gh, chinese acad sci, key lab semicond mat sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: tghsugar@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | a photovoltaic quantum dot infrared photodetector with inas/gaas/algaas structures is reported. the detector is sensitive to normal incident light. at zero bias and 78 k, a clear spectral response in the range of 2 -7 mu m has been obtained with peaks at 3.1, 4.8 and 5.7 mu m. the bandgap energies of gaas and al0.2ga0.8as at 78k are calculated and the energy diagram of the transitions in the quantum-dot infrared photodetector (qdip) is given out. the photocurrent signals can be detected up to 110 k, which is state-of-the-art for photovoltaic qdip. the photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28t13:44:59z no. of bitstreams: 1 a photovoltaic inas quantum-dot infrared photodetector.pdf: 515015 bytes, checksum: 3d2632fa0dcbc50d86954c7368be3e97 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-28t13:50:22z (gmt) no. of bitstreams: 1 a photovoltaic inas quantum-dot infrared photodetector.pdf: 515015 bytes, checksum: 3d2632fa0dcbc50d86954c7368be3e97 (md5); made available in dspace on 2010-04-28t13:50:22z (gmt). no. of bitstreams: 1 a photovoltaic inas quantum-dot infrared photodetector.pdf: 515015 bytes, checksum: 3d2632fa0dcbc50d86954c7368be3e97 (md5) previous issue date: 2010; national natural science foundation of china 60990315 60676029 national basic research program 2006cb604904; 其它 |
| 学科主题 | 半导体器件 |
| 资助信息 | national natural science foundation of china 60990315 60676029 national basic research program 2006cb604904 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11209]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Tang GH ,Xu B ,Jiang,et al. A Photovoltaic InAs Quantum-Dot Infrared Photodetector[J]. chinese physics letters,2010,27(4):art. no. 047801. |
| APA | Tang GH .,Xu B .,Jiang.,LW .,Kong JX .,...&Wang ZG .(2010).A Photovoltaic InAs Quantum-Dot Infrared Photodetector.chinese physics letters,27(4),art. no. 047801. |
| MLA | Tang GH ,et al."A Photovoltaic InAs Quantum-Dot Infrared Photodetector".chinese physics letters 27.4(2010):art. no. 047801. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。