Magnetoresistance in a nominally undoped InGaN thin film
文献类型：期刊论文
| 作者 | Ding K
|
| 刊名 | applied physics a-materials science & processing
 |
| 出版日期 | 2010 |
| 卷号 | 99期号:1页码:63-66 |
| 关键词 | NEGATIVE MAGNETORESISTANCE DIODES |
| 通讯作者 | ding, k, chinese acad sci, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dingkai@red.semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | the magnetotransport properties of a nominally undoped ingan thin film grown by metal-organic chemical vapor deposition were investigated. resistivity was measured under a magnetic field up to 5 t over the temperature range of 3 to 298 k. the film exhibits a negative magnetoresistance at low temperatures. its magnitude decreases with increasing temperature, and turns to be positive for temperatures above 100 k. the negative component was described by a model proposed by khosla and fischer for spin scattering of carriers in an impurity band. the positive part was attributed to the effect of lorentz force on the carrier motion. agreement between the model and the data is presented.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28t13:55:16z no. of bitstreams: 1 magnetoresistance in a nominally undoped ingan thin film.pdf: 349470 bytes, checksum: 42169f955f4d6e8453320a8e2c8866ec (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-28t14:06:31z (gmt) no. of bitstreams: 1 magnetoresistance in a nominally undoped ingan thin film.pdf: 349470 bytes, checksum: 42169f955f4d6e8453320a8e2c8866ec (md5); made available in dspace on 2010-04-28t14:06:31z (gmt). no. of bitstreams: 1 magnetoresistance in a nominally undoped ingan thin film.pdf: 349470 bytes, checksum: 42169f955f4d6e8453320a8e2c8866ec (md5) previous issue date: 2010; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11211]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ding K. Magnetoresistance in a nominally undoped InGaN thin film[J]. applied physics a-materials science & processing,2010,99(1):63-66. |
| APA | Ding K.(2010).Magnetoresistance in a nominally undoped InGaN thin film.applied physics a-materials science & processing,99(1),63-66. |
| MLA | Ding K."Magnetoresistance in a nominally undoped InGaN thin film".applied physics a-materials science & processing 99.1(2010):63-66. |
入库方式： OAI收割
来源：半导体研究所
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