Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
文献类型：期刊论文
| 作者 | Jin P ; Wei HY; Song HP
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 96期号:15页码:art. no. 151904 |
| 关键词 | alloying annealing electrical conductivity excitons II-VI semiconductors magnesium compounds MOCVD coatings photoluminescence positron annihilation semiconductor thin films vacancies (crystal) wide band gap semiconductors zinc compounds SEMICONDUCTORS EMISSION ORIGIN DIODES |
| 通讯作者 | yang, al, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: alyang@semi.ac.cn ; xlliu@semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | temperature-dependent photoluminescence characteristics of non-polar m-plane zno and znmgo alloy films grown by metal organic chemical vapor deposition have been studied. the enhancement in emission intensity caused by localized excitons in m-plane znmgo alloy films was directly observed and it can be further improved after annealing in nitrogen. the concentration of zn vacancies in the films was increased by alloying with mg, which was detected by positron annihilation spectroscopy. this result is very important to directly explain why undoped zn1-xmgxo thin films can show p-type conduction by controlling mg content, as discussed by li [appl. phys. lett. 91, 232115 (2007)].; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-04t13:53:02z no. of bitstreams: 1 photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane znmgo thin films.pdf: 349980 bytes, checksum: 68edb24d2fdccb0cf4b8e1ed92fbffb4 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-04t14:11:35z (gmt) no. of bitstreams: 1 photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane znmgo thin films.pdf: 349980 bytes, checksum: 68edb24d2fdccb0cf4b8e1ed92fbffb4 (md5); made available in dspace on 2010-05-04t14:11:35z (gmt). no. of bitstreams: 1 photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane znmgo thin films.pdf: 349980 bytes, checksum: 68edb24d2fdccb0cf4b8e1ed92fbffb4 (md5) previous issue date: 2010; 863 high technology r&d program of china 2007aa03z402 2007aa03z451；special funds for major state basic research project (973 program) of china 2006cb604907；national science foundation of china 60506002; 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | 863 high technology r&d program of china 2007aa03z402 2007aa03z451；special funds for major state basic research project (973 program) of china 2006cb604907；national science foundation of china 60506002 |
| 语种 | 英语 |
| 公开日期 | 2010-05-04 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11218]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jin P,Wei HY,Song HP. Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films[J]. applied physics letters,2010,96(15):art. no. 151904. |
| APA | Jin P,Wei HY,&Song HP.(2010).Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films.applied physics letters,96(15),art. no. 151904. |
| MLA | Jin P,et al."Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films".applied physics letters 96.15(2010):art. no. 151904. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。