Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure
文献类型：期刊论文
| 作者 | Tan HR ; Yin ZG; You JB; Zhang SG; Zhang XW
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| 刊名 | journal of applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 107期号:8页码:art. no. 083701 |
| 关键词 | LIGHT-EMITTING-DIODES SPECTROSCOPY EPITAXY GROWTH FILM SIO2 |
| 通讯作者 | zhang, xw, cas, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: xwzhang@semi.ac.cn ; paul.chu@cityu.edu.hk |
| 合作状况 | 国际 |
| 英文摘要 | n-zno/p-si heterojunction light-emitting diodes (leds) show weak defect-related electroluminescence (el). in order to analyze the origin of the weak el, the energy band alignment and interfacial microstructure of zno/si heterojunction are investigated by x-ray photoelectron spectroscopy. the valence band offset (vbo) is determined to be 3.15 +/- 0.15 ev and conduction band offset is -0.90 +/- 0.15 ev, showing a type-ii band alignment. the higher vbo means a high potential barrier for holes injected from si into zno, and hence, charge carrier recombination takes place mainly on the si side rather than the zno layer. it is also found that a 2.1 nm thick siox interfacial layer is formed at the zno/si interface. the unavoidable siox interfacial layer provides to a large number of nonradiative centers at the zno/si interface and gives rise to poor crystallinity in the zno films. the weak el from the n-zno/p-si leds can be ascribed to the high zno/si vbo and existence of the siox interfacial layer.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24t05:42:51z no. of bitstreams: 1 electroluminescence behavior of znosi heterojunctions energy band alignment and interfacial microstructure.pdf: 393729 bytes, checksum: aa7b7bcdb2a6e67e684677feb0ff0006 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24t07:16:08z (gmt) no. of bitstreams: 1 electroluminescence behavior of znosi heterojunctions energy band alignment and interfacial microstructure.pdf: 393729 bytes, checksum: aa7b7bcdb2a6e67e684677feb0ff0006 (md5); made available in dspace on 2010-05-24t07:16:08z (gmt). no. of bitstreams: 1 electroluminescence behavior of znosi heterojunctions energy band alignment and interfacial microstructure.pdf: 393729 bytes, checksum: aa7b7bcdb2a6e67e684677feb0ff0006 (md5) previous issue date: 2010; "863" project of china 2009aa03z305 national natural science foundation of china 60876031; 国际 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | "863" project of china 2009aa03z305 national natural science foundation of china 60876031 |
| 语种 | 英语 |
| 公开日期 | 2010-05-24 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11232]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Tan HR,Yin ZG,You JB,et al. Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure[J]. journal of applied physics,2010,107(8):art. no. 083701. |
| APA | Tan HR,Yin ZG,You JB,Zhang SG,&Zhang XW.(2010).Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure.journal of applied physics,107(8),art. no. 083701. |
| MLA | Tan HR,et al."Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure".journal of applied physics 107.8(2010):art. no. 083701. |
入库方式： OAI收割
来源：半导体研究所
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