Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
文献类型：期刊论文
| 作者 | Cao YL (Cao Yu-Lian) ; Yang T (Yang Tao) ; Xu PF (Xu Peng-Fei) ; Ji HM (Ji Hai-Ming) ; Gu YX (Gu Yong-Xian) ; Wang XD (Wang Xiao-Dong) ; Wang Q (Wang Qing) ; Ma WQ (Ma Wen-Quan) ; Chen LH (Chen Liang-Hui) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 96期号:17页码:art. no. 171101 |
| 关键词 | excited states gallium arsenide III-V semiconductors indium compounds laser tuning optical films quantum dot lasers silicon compounds tantalum compounds TEMPERATURE-DEPENDENCE THRESHOLD PERFORMANCE GAIN |
| 通讯作者 | yang, t, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: tyang@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | in this letter, we present a facet coating design to delay the excited state (es) lasing for 1310 nm inas/gaas quantum dot lasers. the key point of our design is to ensure that the mirror loss of es is larger than that of the ground state by decreasing the reflectivity of the es. in the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are ta2o5 and sio2, respectively. compared with the traditional si/sio2 facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the es lasing has been delayed from 90 to 100 degrees c for the laser diodes with cavity length of 1.2 mm. furthermore, the characteristic temperature (t-0) of the laser diodes is also improved.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24t07:15:03z no. of bitstreams: 1 delay of the excited state lasing of 1310 nm inasgaas quantum dot lasers by facet coating.pdf: 391400 bytes, checksum: e58506e581d2b497a385d9136eccd125 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24t07:17:42z (gmt) no. of bitstreams: 1 delay of the excited state lasing of 1310 nm inasgaas quantum dot lasers by facet coating.pdf: 391400 bytes, checksum: e58506e581d2b497a385d9136eccd125 (md5); made available in dspace on 2010-05-24t07:17:42z (gmt). no. of bitstreams: 1 delay of the excited state lasing of 1310 nm inasgaas quantum dot lasers by facet coating.pdf: 391400 bytes, checksum: e58506e581d2b497a385d9136eccd125 (md5) previous issue date: 2010; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-05-24 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11244]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Cao YL ,Yang T ,Xu PF ,et al. Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating[J]. applied physics letters,2010,96(17):art. no. 171101. |
| APA | Cao YL .,Yang T .,Xu PF .,Ji HM .,Gu YX .,...&Chen LH .(2010).Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating.applied physics letters,96(17),art. no. 171101. |
| MLA | Cao YL ,et al."Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating".applied physics letters 96.17(2010):art. no. 171101. |
入库方式： OAI收割
来源：半导体研究所
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