Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Jia CH ; Zhou XL
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| 刊名 | applied physics a-materials science & processing
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| 出版日期 | 2010 |
| 卷号 | 99期号:2页码:511-514 |
| 关键词 | BATIO3 SRTIO3 |
| 通讯作者 | chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yhchen@red.semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | x-ray photoelectron spectroscopy has been used to measure the valence band offset of the zno/batio3 heterojunction grown by metal-organic chemical vapor deposition. the valence band offset (vbo) is determined to be 0.48 +/- 0.09 ev, and the conduction band offset (cbo) is deduced to be about 0.75 ev using the band gap of 3.1 ev for bulk batio3. it indicates that a type-ii band alignment forms at the interface, in which the valence and conduction bands of zno are concomitantly higher than those of batio3. the accurate determination of vbo and cbo is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04t14:27:37z no. of bitstreams: 1 valence band offset of znobatio3 heterojunction measured by x-ray photoelectron spectroscopy.pdf: 368346 bytes, checksum: c5a43aade3c3b0b1e42f3ff469fb5cf9 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-06-04t14:37:17z (gmt) no. of bitstreams: 1 valence band offset of znobatio3 heterojunction measured by x-ray photoelectron spectroscopy.pdf: 368346 bytes, checksum: c5a43aade3c3b0b1e42f3ff469fb5cf9 (md5); made available in dspace on 2010-06-04t14:37:17z (gmt). no. of bitstreams: 1 valence band offset of znobatio3 heterojunction measured by x-ray photoelectron spectroscopy.pdf: 368346 bytes, checksum: c5a43aade3c3b0b1e42f3ff469fb5cf9 (md5) previous issue date: 2010; this work was supported by the 973 program (2006cb604908, 2006cb921607), and the national natural science foundation of china (60625402, 60990313).; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | this work was supported by the 973 program (2006cb604908, 2006cb921607), and the national natural science foundation of china (60625402, 60990313). |
| 语种 | 英语 |
| 公开日期 | 2010-06-04 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11276]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jia CH,Zhou XL. Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy[J]. applied physics a-materials science & processing,2010,99(2):511-514. |
| APA | Jia CH,&Zhou XL.(2010).Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.applied physics a-materials science & processing,99(2),511-514. |
| MLA | Jia CH,et al."Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy".applied physics a-materials science & processing 99.2(2010):511-514. |
入库方式： OAI收割
来源：半导体研究所
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