Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes
文献类型：期刊论文
| 作者 | You JB (You J. B.) ; Zhang XW (Zhang X. W.) ; Zhang SG (Zhang S. G.) ; Wang JX (Wang J. X.) ; Yin ZG (Yin Z. G.) ; Tan HR (Tan H. R.) ; Zhang WJ (Zhang W. J.) ; Chu PK (Chu P. K.) ; Cui B (Cui B.) ; Wowchak AM (Wowchak A. M.) ; Dabiran AM (Dabiran A. M.) ; Chow PP (Chow P. P.) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 96期号:20页码:art. no. 201102 |
| 关键词 | ZNO DEPOSITION |
| 通讯作者 | zhang, xw, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: xwzhang@semi.ac.cn ; paul.chu@cityu.edu.hk |
| 合作状况 | 国际 |
| 英文摘要 | n-zno/p-gan heterojunction light-emitting diodes with and without a sandwiched aln layer were fabricated. the electroluminescence (el) spectrum acquired from the n-zno/p-gan displays broad emission at 650 nm originating from zno and weak emission at 440 nm from gan, whereas the n-zno/aln/p-gan exhibits strong violet emission at 405 nm from zno without gan emission. the el intensity is greatly enhanced by inserting a thin aln intermediate layer and it can be attributed to the suppressed formation of the gaox interfacial layer and confinement effect rendered by the aln potential barrier layer.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-18t14:22:18z no. of bitstreams: 1 improved electroluminescence from n-znoalnp-gan heterojunction light-emitting diodes.pdf: 285038 bytes, checksum: 56d2a2bd28d28500e32161369b6e6ac4 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-06-18t14:47:20z (gmt) no. of bitstreams: 1 improved electroluminescence from n-znoalnp-gan heterojunction light-emitting diodes.pdf: 285038 bytes, checksum: 56d2a2bd28d28500e32161369b6e6ac4 (md5); made available in dspace on 2010-06-18t14:47:20z (gmt). no. of bitstreams: 1 improved electroluminescence from n-znoalnp-gan heterojunction light-emitting diodes.pdf: 285038 bytes, checksum: 56d2a2bd28d28500e32161369b6e6ac4 (md5) previous issue date: 2010; this work was financially supported by the "863" project of china (2009aa03z305), the national natural science foundation of china (60876031 and 60806044), the national basic research program of china (2010cb933803), and hong kong research grants council (rgc) general research funds (cityu 112608).; 国际 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | this work was financially supported by the "863" project of china (2009aa03z305), the national natural science foundation of china (60876031 and 60806044), the national basic research program of china (2010cb933803), and hong kong research grants council (rgc) general research funds (cityu 112608). |
| 语种 | 英语 |
| 公开日期 | 2010-06-18 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11338]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | You JB ,Zhang XW ,Zhang SG ,et al. Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes[J]. applied physics letters,2010,96(20):art. no. 201102. |
| APA | You JB .,Zhang XW .,Zhang SG .,Wang JX .,Yin ZG .,...&Chow PP .(2010).Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes.applied physics letters,96(20),art. no. 201102. |
| MLA | You JB ,et al."Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes".applied physics letters 96.20(2010):art. no. 201102. |
入库方式： OAI收割
来源：半导体研究所
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