Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Xu XQ (Xu Xiaoqing) ; Liu XL (Liu Xianglin) ; Guo Y (Guo Yan) ; Wang J (Wang Jun) ; Song HP (Song Huaping) ; Yang SY (Yang Shaoyan) ; Wei HY (Wei Hongyuan) ; Zhu QS (Zhu Qinsheng) ; Wang ZG (Wang Zhanguo) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 107期号:10页码:art. no. 104510 |
| 关键词 | PHOTOEMISSION-SPECTROSCOPY PRECISE DETERMINATION GA-FACE SURFACE ALN HETEROJUNCTIONS DISCONTINUITY LEVEL |
| 通讯作者 | xu, xq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xxq@semi.ac.cn ; xlliu@red.semi.ac.cn ; qszhu@semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | the influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (xps) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of xps. considering the spontaneous polarization at the surfaces and interfaces and the different positions of fermi levels at the surfaces, we compare the energy band structures of al/ga-polar aln/gan and n-polar gan/aln heterojunctions, and give corrections to the xps-measured valence band offsets. other aln/gan heterojunctions and the piezoelectric polarization are also introduced and discussed in this paper.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-18t14:34:23z no. of bitstreams: 1 influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy.pdf: 313342 bytes, checksum: 95462c50b567ba172d7d01530378c801 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-06-18t14:46:50z (gmt) no. of bitstreams: 1 influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy.pdf: 313342 bytes, checksum: 95462c50b567ba172d7d01530378c801 (md5); made available in dspace on 2010-06-18t14:46:50z (gmt). no. of bitstreams: 1 influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy.pdf: 313342 bytes, checksum: 95462c50b567ba172d7d01530378c801 (md5) previous issue date: 2010; this work was supported by national science foundation of china (grant nos. 60776015 and 60976008), the special funds for major state basic research project (973 program) of china (grant no. 2006cb604907), and the 863 high technology r&d program of china (grant nos. 2007aa03z402 and 2007aa03z451). we acknowledge yang li in the university of science and technology beijing for fruitful discussions.; 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | this work was supported by national science foundation of china (grant nos. 60776015 and 60976008), the special funds for major state basic research project (973 program) of china (grant no. 2006cb604907), and the 863 high technology r&d program of china (grant nos. 2007aa03z402 and 2007aa03z451). we acknowledge yang li in the university of science and technology beijing for fruitful discussions. |
| 语种 | 英语 |
| 公开日期 | 2010-06-18 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11335]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xu XQ ,Liu XL ,Guo Y ,et al. Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy[J]. journal of applied physics,2010,107(10):art. no. 104510. |
| APA | Xu XQ .,Liu XL .,Guo Y .,Wang J .,Song HP .,...&Wang ZG .(2010).Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy.journal of applied physics,107(10),art. no. 104510. |
| MLA | Xu XQ ,et al."Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy".journal of applied physics 107.10(2010):art. no. 104510. |
入库方式： OAI收割
来源：半导体研究所
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