Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Zhao J (Zhao Jie) ; Zeng YP (Zeng Yiping) ; Liu C (Liu Chao) ; Cui LJ (Cui Lijie) ; Li YB (Li Yanbo) |
| 刊名 | applied surface science
 |
| 出版日期 | 2010 |
| 卷号 | 256期号:22页码:6881-6886 |
| 关键词 | ZnTe Molecular beam epitaxy Reflection high-energy electron diffraction X-ray diffraction Atomic force microscopy VAPOR-PHASE EPITAXY N-TYPE ZNTE MBE GROWTH 100 GAAS ZNSE LAYERS SURFACE TEMPERATURE SUBSTRATE EPILAYERS |
| 通讯作者 | zhao, j, chinese acad sci, key lab semicond mat sci, inst semicond, qinghua e rd, beijing 100083, peoples r china. e-mail address: jiezhao@semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | znte epilayers were grown on gaas(0 0 1) substrates by molecular beam epitaxy (mbe) at different vi/ii beam equivalent pressure (bep) ratios (r-vi/ii) in a wide range of 0.96-11 with constant zn flux. based on in situ reflection high-energy electron diffraction (rheed) observation, two-dimensional (2d) growth mode can be formed by increasing the r-vi/ii to 2.8. the te/zn pressure ratios lower than 4.0 correspond to zn-rich growth state, while the ratios over 6.4 correspond to te-rich one. the zn sticking coefficient at various vi/ii ratios are derived by the growth rate measurement. the znte epilayer grown at a r-vi/ii of 6.4 displays the narrowest full-width at half-maximum (fwhm) of double-crystal x-ray rocking curve (dcxrc) for (0 0 4) reflection. atomic force microscopy (afm) characterization shows that the grain size enlarges drastically with the r-vi/ii. the surface root-mean-square (rms) roughness decreases firstly, attains a minimum of 1.14 nm at a r-vi/ii of 4.0 and then increases at higher ratios. it is suggested that the most suitable r-vi/ii be controlled between 4.0 and 6.4 in order to grow high-quality znte epitaxial thin films.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-05t07:31:56z no. of bitstreams: 1 optimization of viii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy.pdf: 1094154 bytes, checksum: aaf269b4e42f329545089c7435a686cd (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-05t07:43:28z (gmt) no. of bitstreams: 1 optimization of viii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy.pdf: 1094154 bytes, checksum: aaf269b4e42f329545089c7435a686cd (md5); made available in dspace on 2010-07-05t07:43:28z (gmt). no. of bitstreams: 1 optimization of viii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy.pdf: 1094154 bytes, checksum: aaf269b4e42f329545089c7435a686cd (md5) previous issue date: 2010; the authors would like to acknowledge the financial support from the knowledge innovation program foundation of institute of semiconductors, chinese academy of sciences (grant no. 09s1010001) and the national natural science foundation of china (grant no. 0913120000).; 国内 |
| 收录类别 | SCI |
| 资助信息 | the authors would like to acknowledge the financial support from the knowledge innovation program foundation of institute of semiconductors, chinese academy of sciences (grant no. 09s1010001) and the national natural science foundation of china (grant no. 0913120000). |
| 语种 | 英语 |
| 公开日期 | 2010-07-05 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11355]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhao J ,Zeng YP ,Liu C ,et al. Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy[J]. applied surface science,2010,256(22):6881-6886. |
| APA | Zhao J ,Zeng YP ,Liu C ,Cui LJ ,&Li YB .(2010).Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy.applied surface science,256(22),6881-6886. |
| MLA | Zhao J ,et al."Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy".applied surface science 256.22(2010):6881-6886. |
入库方式： OAI收割
来源：半导体研究所
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