Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy
文献类型：期刊论文
| 作者 | Guo Y (Guo Yan) ; Liu XL (Liu Xiang-Lin) ; Song HP (Song Hua-Ping) ; Yang AL (Yang An-Li) ; Zheng GL (Zheng Gao-Lin) ; Wei HY (Wei Hong-Yuan) ; Yang SY (Yang Shao-Yan) ; Zhu QS (Zhu Qin-Sheng) ; Wang ZG (Wang Zhan-Guo) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:6页码:art. no. 067302 |
| 关键词 | GE GAAS GROWTH |
| 通讯作者 | guo, y, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail address: guoyan@semi.ac.cn ; xlliu@semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | x-ray photoelectron spectroscopy has been used to measure the valence band offset (vbo) at the gan/ge heterostructure interface. the vbo is directly determined to be 1.13 +/- 0.19 ev, according to the relationship between the conduction band offset delta e-c and the valence band offset delta e-v : delta e-c = e-g(gan) - e-g(ge) - delta e-v, and taking the room-temperature band-gaps as 3.4 and 0.67 ev for gan and ge, respectively. the conduction band offset is deduced to be 1.6 +/- 0.19 ev, which indicates a type-i band alignment for gan/ge. accurate determination of the valence and conduction band offsets is important for the use of gan/ge based devices.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-05t07:35:25z no. of bitstreams: 1 measurement of gange(001) heterojunction valence band offset by x-ray photoelectron spectroscopy.pdf: 549189 bytes, checksum: effb57c707baef3c4085e63e102a932e (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-05t07:46:56z (gmt) no. of bitstreams: 1 measurement of gange(001) heterojunction valence band offset by x-ray photoelectron spectroscopy.pdf: 549189 bytes, checksum: effb57c707baef3c4085e63e102a932e (md5); made available in dspace on 2010-07-05t07:46:56z (gmt). no. of bitstreams: 1 measurement of gange(001) heterojunction valence band offset by x-ray photoelectron spectroscopy.pdf: 549189 bytes, checksum: effb57c707baef3c4085e63e102a932e (md5) previous issue date: 2010; supported by the national natural science foundation of china under grant nos 60776015 and 60976008, the national basic research program of china under grant no 2006cb604907, and the high-technology r&d program of china (nos 2007aa03z402 and 2007aa03z451); 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | supported by the national natural science foundation of china under grant nos 60776015 and 60976008, the national basic research program of china under grant no 2006cb604907, and the high-technology r&d program of china (nos 2007aa03z402 and 2007aa03z451) |
| 语种 | 英语 |
| 公开日期 | 2010-07-05 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11356]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Guo Y ,Liu XL ,Song HP ,et al. Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy[J]. chinese physics letters,2010,27(6):art. no. 067302. |
| APA | Guo Y .,Liu XL .,Song HP .,Yang AL .,Zheng GL .,...&Wang ZG .(2010).Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy.chinese physics letters,27(6),art. no. 067302. |
| MLA | Guo Y ,et al."Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy".chinese physics letters 27.6(2010):art. no. 067302. |
入库方式： OAI收割
来源：半导体研究所
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