中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature

文献类型:期刊论文

作者Liu JQ (Liu Junqi) ; Kong N (Kong Ning) ; Li L (Li Lu) ; Liu FQ (Liu Fengqi) ; Wang LJ (Wang Lijun) ; Chen JY (Chen Jianyan) ; Wang ZG (Wang Zhanguo)
刊名semiconductor science and technology
出版日期2010
卷号25期号:7页码:art. no. 075011
关键词WELL INFRARED PHOTODETECTORS
通讯作者liu, jq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jqliu@semi.ac.cn
合作状况其它
英文摘要this work was supported by the national research projects of china (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006cb604903, 2007aa03z446 and 2009aa03z403, 10990100, respectively). the authors would like to thank p liang, y hu, h sun, x l zhang, b j sun, h l zhen and n li for their help in processing and characterization.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-18t13:54:57z no. of bitstreams: 1 high resistance algaasgaas quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature.pdf: 512386 bytes, checksum: 0a4525ae10f4688f35f22f6a0db96fca (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-18t13:56:14z (gmt) no. of bitstreams: 1 high resistance algaasgaas quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature.pdf: 512386 bytes, checksum: 0a4525ae10f4688f35f22f6a0db96fca (md5); made available in dspace on 2010-07-18t13:56:14z (gmt). no. of bitstreams: 1 high resistance algaasgaas quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature.pdf: 512386 bytes, checksum: 0a4525ae10f4688f35f22f6a0db96fca (md5) previous issue date: 2010; liu, jq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jqliu@semi.ac.cn; 其它
学科主题半导体材料
收录类别SCI
资助信息liu, jq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jqliu@semi.ac.cn
语种英语
公开日期2010-07-18
源URL[http://ir.semi.ac.cn/handle/172111/11372]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Liu JQ ,Kong N ,Li L ,et al. High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature[J]. semiconductor science and technology,2010,25(7):art. no. 075011.
APA Liu JQ .,Kong N .,Li L .,Liu FQ .,Wang LJ .,...&Wang ZG .(2010).High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature.semiconductor science and technology,25(7),art. no. 075011.
MLA Liu JQ ,et al."High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature".semiconductor science and technology 25.7(2010):art. no. 075011.

入库方式: OAI收割

来源:半导体研究所

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