Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Zheng GL (Zheng Gaolin) ; Wang J (Wang Jun) ; Liu XL (Liu Xianglin) ; Yang AL (Yang Anli) ; Song HP (Song Huaping) ; Guo Y (Guo Yan) ; Wei HY (Wei Hongyuan) ; Jiao CM (Jiao Chunmei) ; Yang SY (Yang Shaoyan) ; Zhu QS (Zhu Qinsheng) ; Wang ZG (Wang Zhanguo) |
| 刊名 | applied surface science
 |
| 出版日期 | 2010 |
| 卷号 | 256期号:23页码:7327-7330 |
| 关键词 | MgO Rutile Band offset X-ray photoelectron spectroscopy Gate dielectric Dye-sensitized solar cells |
| 通讯作者 | zheng, gl, 35 tsinghua e rd, beijing 100083, peoples r china. 电子邮箱地址: zhenggl@semi.ac.cn ; xlliu@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | the valence band offset (vbo) of mgo/tio2 (rutile) heterojunction has been directly measured by xray photoelectron spectroscopy. the vbo of the heterojunction is determined to be 1.6 +/- 0.3 ev and the conduction band offset (cbo) is deduced to be 3.2 +/- 0.3 ev, indicating that the heterojunction exhibits a type-i band alignment. these large values are sufficient for mgo to act as tunneling barriers in tio2 based devices. the accurate determination of the valence and conduction band offsets is important for use of mgo as a buffer layer in tio2 based field-effect transistors and dye-sensitized solar cells.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t00:40:55z no. of bitstreams: 1 valence band offset of mgo-tio2 (rutile) heterojunction measured by x-ray photoelectron spectroscopy.pdf: 186221 bytes, checksum: 791deec6e93b6033814be063315a6c12 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t00:58:14z (gmt) no. of bitstreams: 1 valence band offset of mgo-tio2 (rutile) heterojunction measured by x-ray photoelectron spectroscopy.pdf: 186221 bytes, checksum: 791deec6e93b6033814be063315a6c12 (md5); made available in dspace on 2010-08-17t00:58:14z (gmt). no. of bitstreams: 1 valence band offset of mgo-tio2 (rutile) heterojunction measured by x-ray photoelectron spectroscopy.pdf: 186221 bytes, checksum: 791deec6e93b6033814be063315a6c12 (md5) previous issue date: 2010; this work was supported by national science foundation of china (nos. 60776015, 60976008), the special funds for major state basic research project (973 program) of china (no. 2006cb604907), and the 863 high technology r&d program of china (nos. 2007aa03z402 and 2007aa03z451).; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | this work was supported by national science foundation of china (nos. 60776015, 60976008), the special funds for major state basic research project (973 program) of china (no. 2006cb604907), and the 863 high technology r&d program of china (nos. 2007aa03z402 and 2007aa03z451). |
| 语种 | 英语 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13471]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zheng GL ,Wang J ,Liu XL ,et al. Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy[J]. applied surface science,2010,256(23):7327-7330. |
| APA | Zheng GL .,Wang J .,Liu XL .,Yang AL .,Song HP .,...&Wang ZG .(2010).Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy.applied surface science,256(23),7327-7330. |
| MLA | Zheng GL ,et al."Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy".applied surface science 256.23(2010):7327-7330. |
入库方式： OAI收割
来源：半导体研究所
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