Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
文献类型：期刊论文
| 作者 | Zhou XL (Zhou X. L.) ; Chen YH (Chen Y. H.) ; Liu JQ (Liu J. Q.) ; Jia CH (Jia C. H.) ; Zhou GY (Zhou G. Y.) ; Ye XL (Ye X. L.) ; Xu B (Xu Bo) ; Wang ZG (Wang Z. G.) |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 43期号:29页码:art. no. 295401 |
| 关键词 | CARRIER RELAXATION STATES SUPERLATTICES CONFINEMENT LASER |
| 合作状况 | 其它 |
| 英文摘要 | we have systematically studied the temperature dependent photoluminescence of a self-assembled in(ga)as/gaas quantum dot (qd) system with different areal densities from similar to 10(9) to similar to 10(11) cm(-2). different carrier channels are revealed experimentally and confirmed theoretically via a modified carrier equation model considering a new carrier transfer channel, i.e. continuum states ( cs). the wetting layer is demonstrated to be the carrier quenching channel for the low-density qds but the carrier transfer channel for the high-density qds. in particular, for the ingaas/gaas qds with a medium density of similar to 10(10) cm(-2), the cs is verified to be an additional carrier transfer channel in the low temperature regime of 10-60 k, which is studied in detail via our models. the possible carrier channels that act on different temperature regimes are further discussed, and it is demonstrated that density is not a crucial factor in determining the carrier lateral coupling strength.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t00:50:51z no. of bitstreams: 1 temperature dependent photoluminescence of an in(ga)as....pdf: 231058 bytes, checksum: ef6fe9730991d959b25d992aea6a6d27 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t00:58:39z (gmt) no. of bitstreams: 1 temperature dependent photoluminescence of an in(ga)as....pdf: 231058 bytes, checksum: ef6fe9730991d959b25d992aea6a6d27 (md5); made available in dspace on 2010-08-17t00:58:39z (gmt). no. of bitstreams: 1 temperature dependent photoluminescence of an in(ga)as....pdf: 231058 bytes, checksum: ef6fe9730991d959b25d992aea6a6d27 (md5) previous issue date: 2010; this work was supported by the 973 programme (2006cb604908, 2006cb921607) and the national natural science foundation of china (60625402, 60990313).; 其它 |
| 学科主题 | 半导体材料 |
| 资助信息 | this work was supported by the 973 programme (2006cb604908, 2006cb921607) and the national natural science foundation of china (60625402, 60990313). |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13473]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhou XL ,Chen YH ,Liu JQ ,et al. Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density[J]. journal of physics d-applied physics,2010,43(29):art. no. 295401. |
| APA | Zhou XL .,Chen YH .,Liu JQ .,Jia CH .,Zhou GY .,...&Wang ZG .(2010).Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density.journal of physics d-applied physics,43(29),art. no. 295401. |
| MLA | Zhou XL ,et al."Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density".journal of physics d-applied physics 43.29(2010):art. no. 295401. |
入库方式： OAI收割
来源：半导体研究所
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