Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
文献类型：期刊论文
| 作者 | Liu JM (Liu J. M.) ; Liu XL (Liu X. L.) ; Xu XQ (Xu X. Q.) ; Wang J (Wang J.) ; Li CM (Li C. M.) ; Wei HY (Wei H. Y.) ; Yang SY (Yang S. Y.) ; Zhu QS (Zhu Q. S.) ; Fan YM (Fan Y. M.) ; Zhang XW (Zhang X. W.) ; Wang ZG (Wang Z. G.) |
| 刊名 | nanoscale research letters
 |
| 出版日期 | 2010 |
| 卷号 | 5期号:8页码:1340-1343 |
| 关键词 | Valence band offset w-InN/h-BN heterojunction X-ray photoelectron spectroscopy Conduction band offset Valence band offset NEGATIVE ELECTRON-AFFINITY INDIUM NITRIDE WURTZITE GAN SURFACE FILM ALN TRANSPORT EMISSION NAXWO3 GROWTH |
| 合作状况 | 其它 |
| 英文摘要 | x-ray photoelectron spectroscopy has been used to measure the valence band offset (vbo) of the w-inn/h-bn heterojunction. we find that it is a type-ii heterojunction with the vbo being -0.30 +/- a 0.09 ev and the corresponding conduction band offset (cbo) being 4.99 +/- a 0.09 ev. the accurate determination of vbo and cbo is important for designing the w-inn/h-bn-based electronic devices.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t00:54:13z no. of bitstreams: 1 measurement of w-inn h-bn heterojunction band offsets by x-ray photoemission spectroscopy.pdf: 285468 bytes, checksum: 9930171d3e2a475703b0f6981ff7f68c (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t00:58:49z (gmt) no. of bitstreams: 1 measurement of w-inn h-bn heterojunction band offsets by x-ray photoemission spectroscopy.pdf: 285468 bytes, checksum: 9930171d3e2a475703b0f6981ff7f68c (md5); made available in dspace on 2010-08-17t00:58:50z (gmt). no. of bitstreams: 1 measurement of w-inn h-bn heterojunction band offsets by x-ray photoemission spectroscopy.pdf: 285468 bytes, checksum: 9930171d3e2a475703b0f6981ff7f68c (md5) previous issue date: 2010; the authors are grateful to professor huanhua wang and dr. tieying yang of the institute of high energy physics, chinese academy of science. this work was supported by national science foundation of china (no. 60776015, 60976008), the special funds for major state basic research project (973 program) of china (no. 2006 cb604907), and the 863 high technology r&d program of china (no. 2007aa03z402,2007aa03z451).; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | the authors are grateful to professor huanhua wang and dr. tieying yang of the institute of high energy physics, chinese academy of science. this work was supported by national science foundation of china (no. 60776015, 60976008), the special funds for major state basic research project (973 program) of china (no. 2006 cb604907), and the 863 high technology r&d program of china (no. 2007aa03z402,2007aa03z451). |
| 语种 | 英语 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13474]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Liu JM ,Liu XL ,Xu XQ ,et al. Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy[J]. nanoscale research letters,2010,5(8):1340-1343. |
| APA | Liu JM .,Liu XL .,Xu XQ .,Wang J .,Li CM .,...&Wang ZG .(2010).Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.nanoscale research letters,5(8),1340-1343. |
| MLA | Liu JM ,et al."Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy".nanoscale research letters 5.8(2010):1340-1343. |
入库方式： OAI收割
来源：半导体研究所
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